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CP630

PNP Transistor

Description

PROCESS Power Transistor CP630 PNP - Silicon Darlington Transistor Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER EPITAXIAL PLANAR 80 x 80 MILS 8.0 MILS 18 x 27 MILS 34 x 34 MILS Al - 30,000Å Ti/Pd/Ag -...

Central Semiconductor

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