PROCESS
General Purpose Rectifier
500mA Glass Passivated Rectifier Chip
CPD04
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PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 26 x 26 MILS 8.5 MILS 14 x 14 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER 18,00...