PROCESS
CPD48V
Schottky Diode
High Current Schottky Diode Chip
www.DataSheet4U.com
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 13.8 x 13.8 MILS 7.1 MILS 9.0 x 9.0 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 89,720 PRINCIPAL DEVICE TYPES CMPSH-3...
