BSC205N10LS G
OptiMOS™2 Power-Transistor
Features N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A
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