barrier diode. YG862C12R Datasheet

YG862C12R Datasheet PDF, Equivalent


Part Number

YG862C12R

Description

High Voltage Schottky barrier diode

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG862C12R Datasheet


YG862C12R Datasheet
YG862C12R (10A)
High Voltage Schottky barrier diode
Major characteristics
Characteristics YG862C12R Units Condition
VRRM 120 V
VF
0.88
V Tc=25°C MAX.
IO 10 A
Features
Low VF
High Voltage
Center tap connection
Applications
High frequency operation
DC-DC converters
AC adapter
(120V / 10A )
[0401]
Outline drawings, mm
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1 23
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
Package : TO-220F
Epoxy resin UL : V-0
Connection diagram
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
12
Rating
3
Unit
Repetitive peak surge reverse voltage VRSM
tw=500ns, duty=1/40
120
V
Repetitive peak reverse voltage
Isolating voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
VRRM
Viso
Io
IFSM
Tj
Terminals-to-Case,
AC.1min
Square wave, duty=1/2
Tc=122°C
Sine wave
10ms 1shot
120
1500
10 *
75
+150
V
V
A
A
°C
Storage temperature
Tstg
-40 to +150
°C
* Out put current of center tap full wave connection
**Rating per element
Electrical characteristics (at Tc=25°C Unless otherwise specified )
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VF IFM=10A
0.88 V
Reverse current
Thermal resistance
IR
Rth(j-c)
VR=VRRM
Junction to case
150 µA
3.0 °C/W
Mechanical characteristics
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Recommended torque
0.3 to 0.5
N·m
Approximate mass
2g

YG862C12R Datasheet
(120V / 10A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V F Forward Voltage (V)
Forward Power Dissipation (max.)
8
Io
λ
6 360°
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
4 Square wave λ=180°
DC
2
Per 1element
0
0246
I o Average Forward Current (A)
YG862C12R (10A)
Reverse Characteristic (typ.)
101 Tj=150°C
Tj=125°C
100 Tj=100°C
10-1
10-2
Tj= 25°C
10-3
10-4
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
V R Reverse Voltage (V)
Reverse Power Dissipation (max.)
4
360°
VR
α
DC
2
α=180°
0
0 20 40 60 80 100 120 140
V R Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
160
150
140
130
120
110
360°
λ
100 Io
VR=60V
90
DC
Sine wave λ =180°
Square wave λ =180°
Square wave λ =120°
Square wave λ =60°
80
0
5 10 15
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1 10 100 1000
VR Reverse Voltage (V)


Features Datasheet pdf YG862C12R (10A) High Voltage Schottky ba rrier diode Major characteristics 10±0 .5 (120V / 10A ) [0401] Outline drawi ngs, mm ø3.2 +0.2 -0.1 4.5±0.2 2.7± 0.2 6.3 2.7±0.2 Characteristics YG86 2C12R Units Condition VRRM VF IO 120 0. 88 10 V V A Tc=25°C MAX. 3.7±0.2 1 2 3 1.2±0.2 13Min 15±0.3 0.7±0.2 2.54±0.2 0.6 +0.2 -0 2.7±0.2 Fea tures Low VF High Voltage Center tap co nnection Applications High frequency o peration DC-DC converters AC adapter Pa ckage : TO-220F Epoxy resin UL : V-0 C onnection diagram Maximum ratings and characteristics Absolute maximum rating s (at Tc=25°C Unless otherwise specifi ed ) Item Repetitive peak surge reverse voltage Repetitive peak reverse voltag e Isolating voltage Average output curr ent Non-repetitive surge current ** Ope rating junction temperature Storage tem perature Symbol VRSM VRRM Viso Io IFSM Tj Tstg Terminals-to-Case, AC.1min Squa re wave, duty=1/2 Tc=122°C Sine wave 1 0ms 1shot Conditions tw=500ns, duty=1/40 1 2 3 Rating 120 120 1500 10 * 75 +.
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