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2SA1120

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1120 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= 0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobo flash applications ·Audio power amplifer applications ABSOLUTE MAXIM...

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