isc Silicon PNP Power Transistor
2SA1109
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier and high power
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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