DatasheetsPDF.com

2SA769

Part Number	2SA769
Manufacturer	Inchange Semiconductor
Description	POWER TRANSISTOR
Published	Jul 4, 2011
Detailed Description	isc Silicon PNP Power Transistor 2SA769 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -80(V)(Min.) ·Com...
Datasheet	2SA769 PDF File

Overview

isc Silicon PNP Power Transistor 2SA769 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -80(V)(Min.
) ·Complement to Type 2SC1827 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A IB Base Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
...

Similar Datasheet

2SA700 PNP Transistor - INCHANGE
2SA701 (2SA701 / 2SA702) EPITAXIAL PLANAR TYPE SILICON TRANSISTOR - ETC
2SA702 (2SA701 / 2SA702) EPITAXIAL PLANAR TYPE SILICON TRANSISTOR - ETC
2SA708 Transistors - ETC
2SA708 PNP Transistor - Bluecolour
2SA709 Transistors - ETC
2SA714 Silicon POwer Transistors - SavantIC
2SA714 POWER TRANSISTOR - Inchange Semiconductor
2SA715 Silicon PNP Transistor - Hitachi Semiconductor
2SA715 Silicon PNP transistor - BLUE ROCKET ELECTRONICS

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)