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2SA765

Inchange Semiconductor
Part Number 2SA765
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jul 4, 2011
Detailed Description isc Silicon PNP Power Transistor 2SA765 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low C...
Datasheet PDF File 2SA765 PDF File

2SA765
2SA765


Overview
isc Silicon PNP Power Transistor 2SA765 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max.
)@ IC= 4A ·Complement to Type 2SC1445 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~...



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