isc Silicon PNP Power Transistor
2SA756
DESCRIPTION ·High Power Dissipation-
: PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier power output stage and
general purpose applications.
ABSOLUTE...
