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2SA1667

POWER TRANSISTOR

Description

isc Silicon PNP Power Transistor 2SA1667 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= -10V, IC= -0.7A) ·Complement to Type 2SC4381 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV vertical output ,audio output driver and gen...

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