Schottky Diode. IDH06S60C Datasheet

IDH06S60C Diode. Datasheet pdf. Equivalent

IDH06S60C Datasheet
Recommendation IDH06S60C Datasheet
Part IDH06S60C
Description Schottky Diode
Feature IDH06S60C; IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material.
Manufacture Infineon Technologies
Datasheet
Download IDH06S60C Datasheet




Infineon Technologies IDH06S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
www.DataSheet4U.net
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDH06S60C
600 V
15 nC
6A
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH06S60C
PG-TO220-2 D06S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
6
9
49
Unit
A
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs
i ²t value
i 2dt
T C=25 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM
Diode dv/dt ruggedness
dv/ dt V R = 0….480V
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.0
T sold
M3 and M3.5 screws
1.6mm (0.063 in.) from
case for 10s
page 1
28
210
12
600
50
63
-55 ... 175
60
260
A2s
V
V/ns
W
°C
Mcm
°C
2009-06-02



Infineon Technologies IDH06S60C
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
leaded
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
Diode forward voltage
V DC I R=0.08 mA
V F I F=6 A, T j=25 °C
I F=6 A, T j=150 °C
Reverse current
I R V R=600 V, T j=25 °C
IDH06S60C
min.
Values
typ.
Unit
max.
- - 2.4 K/W
- - 62
600 -
-V
- 1.5 1.7
- 1.7 2.1
- 0.7 80 µA
V R=600 V, T j=150 °C
-
3 800
AC characteristics
Total capacitive charge
Switching time3)
Total capacitance
Q c V R=400 V, I FI F,max,
di F/dt =200 A/µs,
t c T j=150 °C
-
-
15 - nC
- <10 ns
C V R=1 V, f =1 MHz
- 280 - pF
V R=300 V, f =1 MHz
-
35
-
V R=600 V, f =1 MHz
-
35
-
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions, for a time periode of 5ms at 5mA.
3) t c is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4) Only capacitive charge occuring, guaranteed by design.
Rev. 2.0
page 2
2009-06-02



Infineon Technologies IDH06S60C
1 Power dissipation
P tot=f(T C)
parameter: RthJC(max)
70
60
50
40
2 Diode forward current
I F=f(T C); T j175 °C
parameter: RthJC(max); VF(max)
18
16
14
12
10
IDH06S60C
30 8
6
20
4
10 2
0
25 50 75 100 125 150 175 200
T C [°C]
0
25 50 75 100 125 150 175 200
T C [°C]
3 Typ. forward characteristic
I F=f(V F); t p=400 µs
parameter: T j
18
16
25 °C
14
12
10
100 °C
175 °C
150 °C
4 Typ. forward characteristc in surge current
mode
I F=f(V F); t p=400 µs; parameter Tj
70
175 °C
60
-55 °C
50
40 25 °C
8 30
100 °C
6
20
150 °C
4
10
2
-55 °C
0
0
01234
02468
V F [V]
V F [V]
Rev. 2.0
page 3
2009-06-02







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)