IXST30N60BD1. T30N60BD1 Datasheet

T30N60BD1 IXST30N60BD1. Datasheet pdf. Equivalent

Part T30N60BD1
Description IXST30N60BD1
Feature High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Cir.
Manufacture IXYS Corporation
Datasheet
Download T30N60BD1 Datasheet



T30N60BD1
High Speed IGBT with Diode
Short Circuit SOA Capability
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
VCES
IC25
VCE(sat)
tfi
= 600 V
= 55 A
= 2.0 V
= 140 ns
Symbol
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Test Conditions
Maximum Ratings
VCES
V
CGR
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MW
VGES
VGEM
Continuous
Transient
I
C25
T
C
= 25°C
IC90 TC = 90°C
I
CM
T
C
= 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, VCL = 0.8 VCES
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C
RG = 33 W, non repetitive
P
C
T
C
= 25°C
TJ
TJM
T
stg
Md Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
600
±20
±30
55
30
110
ICM = 60
10
V
V
V
V
A
A
A
A
ms
200 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
300 °C
Weight
TO-247/TO-268
TO-264
6/4 g
10 g
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
IC = 750 mA, VGE = 0 V
IC = 2.5 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
600
4
IC = IC90
IC = IC25
V
7V
200 mA
3 mA
±100 nA
2.0 V
2.7 V
TO-247AD
(IXSH)
G
CE
TO-268 (D3)
(IXST)
TO-264
(IXSK)
G
E
C
G
C
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• International standard packages:
JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• Medium freqeuncy IGBT and anti-
parallel FRED in one package
• New generation HDMOSTM process
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Surface mountable, high power case
style
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98517A (7/00)
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T30N60BD1
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
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t
d(on)
tri
t
d(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
t
fi
Eoff
R
thJC
RthCK
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90; VGE = 15 V
VCE = 0.8 VCES; RG = 4.7 W
Note 1.
Inductive load, TJ = 125°C
IC = IC90; VGE = 15 V
VCE = 0.8 VCES; RG = 4.7 W
Note 1
10
3100
240
30
100
30
38
30
30
150
140
1.5
30
35
0.5
270
250
2.5
TO-247
TO-264
0.25
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
270 ns
270 ns
2.5 mJ
ns
ns
mJ
ns
ns
mJ
0.62 K/W
K/W
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-264 AA (IXSK) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
RthJC
IF = IC90, VGE = 0 V
Note 2
TJ = 150 °C
T = 25 °C
J
IF = 50A; VGE = 0 V; TJ = 100 °C
VR = 100 V; -diF/dt = 100 A/ms
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C
1.7 V
2.5 V
2 2.5 A
35 50 ns
.09 K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG.
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
TO-268AA (IXST) (D3 PAK)
Dim. Millimeter
Min. Max.
A 4.9 5.1
A1 2.7 2.9
A2 .02 .25
b 1.15 1.45
b2 1.9 2.1
C .4 .65
D 13.80 14.00
E 15.85 16.05
E1 13.3 13.6
e 5.45 BSC
H 18.70 19.10
L 2.40 2.70
L1 1.20 1.40
L2 1.00 1.15
L3 0.25 BSC
L4 3.80 4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000
.000
.800
.090
.010
.010
.820
.102
.125
.239
.330
.150
.070
.144
.247
.342
.170
.090
.238
.062
.248
.072
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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