IGBT inverter. SKAI45A2GD12-W24DI Datasheet

SKAI45A2GD12-W24DI inverter. Datasheet pdf. Equivalent

Part SKAI45A2GD12-W24DI
Description Three-phase IGBT inverter
Feature SKAI 45 A2 GD12-W24DI Characteristics Symbol Visol VCC Conditions DC, t = 1 s DC supply voltage rms.
Manufacture Semikron International
Datasheet
Download SKAI45A2GD12-W24DI Datasheet



SKAI45A2GD12-W24DI
SKAI 45 A2 GD12-W24DI
HV SKAI 2
Three-phase IGBT inverter
SKAI 45 A2 GD12-W24DI
Target Data
Features
• Optimized for HEV and EV
• high power density
• high overload capability
• Compact integration in IP67 Enclosure:
V, I, T sensors
Gate driver with protection features
EMI filters
Liquid cooling
DC link capacitor
Typical Applications*
• commercial application vehicle
• hybrid vehicle
• battery driven vehicle
No. 14282008
Characteristics
Symbol Conditions
Electrical Data
Visol DC, t = 1 s
VCC DC supply voltage
rms @ rated conditions: dV/dt = 10l/
min, 50% Glykol/ 50% H20, fsw = 4kHz,
Inom VCC = 750V, Vout = 400V, fout = 50Hz,
cos(phi) = 0.85, M = 0.87,
Tcoolant = 65 °C, Tair = 65 °C
fsw Switching frequency
CDC DC Bus Capacitance
Cy EMI Capacitor; DC to enclosure
RF DC+ to enclosure, DC- to enclosure
RBL DC+ to DC-
Mechanical Data
Weight
Height
Width
Length
Mt AC / DC terminals (M8 screw)
Mc
Cover of terminal box (M5x16
flat-head-screw)
Mcg AC / DC cable glands (recommended)
Me
Assembly of
M8 screw
enclosure;
thread (l): > 15mm M6 screw
Mgnd
Ground connection
Hydraulical Data
dp
Pressure drop@ 10l/min,
Tcoolant = 25°C
p Operating pressure
P
Power dissipation to coolant; rated
conditions
Environmental Data
Tstg
Tno
Tair
Tcoolant
IP
storage temperature
Non operating temperature range
Operating range, derating for
Tair > 85°C
Operating range, derating for
Tcoolant > 65°C
Enclosure protection level
With external connector protection
Altitude Vcc = 800 V
min.
1
0.9
13
3.5
13
-40
-40
-40
-40
typ.
4000
750
300
0.66
7.5
1
15
109
244
475
14
4
10
14
100
2.4
IP67
IP6K9K
max. Unit
V
800 V
A
20 kHz
1.25 mF
µF
M
M
kg
mm
mm
mm
15 Nm
4.5 Nm
Nm
20 Nm
14 Nm
15 Nm
mbar
2 bar
kW
85 °C
105 °C
105 °C
75 °C
2000
m
HV SKAI 2
© by SEMIKRON
Rev. 10 – 20.04.2011
1



SKAI45A2GD12-W24DI
SKAI 45 A2 GD12-W24DI
HV SKAI 2
Three-phase IGBT inverter
SKAI 45 A2 GD12-W24DI
Target Data
Features
• Optimized for HEV and EV
• high power density
• high overload capability
• Compact integration in IP67 Enclosure:
V, I, T sensors
Gate driver with protection features
EMI filters
Liquid cooling
DC link capacitor
Typical Applications*
• commercial application vehicle
• hybrid vehicle
• battery driven vehicle
No. 14282008
Characteristics
Symbol Conditions
min.
typ.
Interface parameters
Vs
ISO
IS
ViH
ViL
tPOR
tpRESET
Auxiliary supply voltage primary side
Auxiliary supply current primary side
without driving a gate (Vs = 24 V)
Auxiliary supply current primary side,
driving the gates (Vs = 24 V)
Input signal voltage (HIGH)
Input signal voltage (LOW)
Power-on reset completed
Error reset time
16
0.7 * Vs
GND - 0.3
Controller switching parameters
td(on)IO
td(off)IO
tjitter
tSIS
tet
td(err)DSCP
Input-output turn-on propagation time
Input-output turn-off propagation time
Signal transfer prim - sec (total jitter)
Short pulse suppression time
Input impulse extension time
Error input-output propagation time for
DSCP error
0.2
0.9
0.2
td(err)OCP
Error input-output propagation time for
OCP error
td(err)TMP
Error input-output propagation time for
temperature error
tTD Top-Bot interlock dead time
tbl VCE monitoring blanking time
Protection functions
TPCBtrip
Over temperature protection trip level
(PCB)
100
TCStrip
Over temperature protection trip level
on ceramic-substrate
120
TRelPCBtrip
Release temperature for PCB
overtemperature trip level
90
TRelCStrip
Release temperature for ceramic
substrate overtemperature trip level
85
VDCtrip
DC-Link voltage trip level
800
VVStrip
Under voltage protection trip level of
board primary side
VVSrst
Threshold voltage level for driver reset
after failure event
16
ITRIPSC
Overcurrent trip level
Ioutsens
AC sensing range
mIoutsens Gradient of output current sensing
BWIoutsens Bandwidth (3 dB) of AC current sensing
VDCsens Measurable DC-link-voltage
mVDCsens Gradient of DC-link voltage sensing
BWVDCsens
Bandwidth (3 dB) of DC-link voltage
sensing
567
-616
16.2
0
9.835
TCSsens
Temperature sensing range on ceramic
substrate
30
mTCSsens
Gradient of temperature sensing on
ceramic-substrate
BWTCSsens
Bandwidth of temperature sensing on
ceramic-substrate
24
0.1
0.5
0.5
0.25
1
4
4
5
16.695
17
10.034
0.25
83.3
100
max. Unit
32 V
450 mA
870
Vs + 0.3
0.3 * Vs
0.9
3
mA
V
V
s
s
0.6 µs
0.6 µs
50 ns
0.3 µs
1.1 µs
1 µs
10 µs
50 ms
4.1 µs
5.1 µs
°C
°C
°C
°C
V
14 V
V
616
17.205
1000
10.236
APEAK
A
mV/A
kHz
V
mV/V
kHz
150 °C
mV/°C
Hz
HV SKAI 2
2
Rev. 10 – 20.04.2011
© by SEMIKRON





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