Operational Amplifiers. RC4157 Datasheet

RC4157 Amplifiers. Datasheet pdf. Equivalent

Part RC4157
Description (RC4156 / RC4157) High Performance Quad Operational Amplifiers
Feature www.fairchildsemi.com RC4156/RC4157 High Performance Quad Operational Amplifiers Features • • • • U.
Manufacture Fairchild Semiconductor
Total Page 13 Pages
Datasheet
Download RC4157 Datasheet



RC4157
www.fairchildsemi.com
RC4156/RC4157
High Performance Quad Operational Amplifiers
Features
• Unity gain bandwidth for RC4156 – 3.5 MHz
• Unity gain bandwidth for RC4157 – 19 MHz
• High slew rate for RC4156 – 1.6 V/µS
• High slew rate for RC4157 – 8.0V/µS
• Low noise voltage – 1.4 µVRMS
• Indefinite short circuit protection
• No crossover distortion
Description
The RC4156 and RC4157 are monolithic integrated circuits,
consisting of four independent high performance operational
amplifiers constructed with an advanced epitaxial process.
These amplifiers feature improved AC performance which
far exceeds that of the 741 type amplifiers. Also featured are
excellent input characteristics and low noise, making this
device the optimum choice for audio, active filter and instru-
mentation applications. The RC4157 is a decompensated
version of the RC4156 and is AC stable in gain configura-
tions of -5 or greater.
Block Diagram
Output (A)
–Input (A)
+Input (A)
+Input (B)
–Input (B)
Output (B)
A
+
+
B
Output (D)
–Input (D)
D+
+Input (D)
+Input (C)
+
C –Input (C)
65-3463-01
Output (C)
Pin Assignments
Output (A)
Input (A)
+Input (A)
+VS
+Input (B)
Input (B)
Output (B)
1
2
3
4
5
6
7
14 Output (D)
13 Input (D)
12 +Input (D)
11 VS
10 +Input (C)
9 Input (C)
8 Output (C)
65-3463-02
www.DataSheet4U.net
REV. 1.0.1 6/13/01



RC4157
PRODUCT SPECIFICATION
RC4156/RC4157
Absolute Maximum Ratings
(beyond which the device may be damaged)1
Parameter
Supply Voltage
Input Voltage2
Differential Input Voltage
Output Short Circuit Duration3
PDTA < 50°C
Operating Temperature
Storage Temperature
Junction Temperature
Lead Soldering Temperature
(60 seconds)
For TA > 50°C Derate at
SOIC
PDIP
RC4156/RC4157
SOIC, PDIP
DIP
SOIC
SOIC
PDIP
Min Typ Max Units
±20 V
±15 V
30 V
Indenite
300 mW
468 mW
0 70 °C
-65 150 °C
125 °C
300 °C
260 °C
5.0 mW/°C
6.25 mW/°C
Notes:
1. Functional operation under any of these conditions is NOT implied. Performance and reliability are guaranteed only if
Operating Conditions are not exceeded.
2. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
3. Short circuit to ground on one amplifier only.
Operating Conditions
Parameter
θJC Thermal resistance
θJA Thermal resistance
SOIC
PDIP
Min Typ Max Units
60 °C/W
200 °C/W
160 °C/W
Electrical Characteristics
(VS = ±15V, RC = 0°C TA +70°C)
Parameters
Input Offset Voltage
Input Offset Current
Input Bias Current
Large Signal Voltage Gain
Output Voltage Swing
Supply Current
Average Input Offset Voltage Drift
Test Conditions
RS 10 k
RL 2 k,VOUT ±10V
RL 2 k
RC4156/4157
Min Typ Max
6.5
100
400
15
±10
10
5.0
Units
mV
nA
nA
V/mV
V
mA
µV/°C
2 REV. 1.0.1 6/13/01





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