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Power Transistor. IPA093N06N3 Datasheet

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Power Transistor. IPA093N06N3 Datasheet






IPA093N06N3 Transistor. Datasheet pdf. Equivalent




IPA093N06N3 Transistor. Datasheet pdf. Equivalent





Part

IPA093N06N3

Description

Power Transistor



Feature


Type OptiMOSTM3 Power-Transistor Featur es • Ideal for high frequency switchi ng and sync. rec. • Optimized technol ogy for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) N-channel, normal level • 100% aval anche tested • Pb-free plating; RoHS compliant • Qualified according to JE DEC1) for target applications Type IP A093N06N3 G IPA093N06N3 G Prod.
Manufacture

Infineon Technologies

Datasheet
Download IPA093N06N3 Datasheet


Infineon Technologies IPA093N06N3

IPA093N06N3; uct Summary VDS RDS(on),max ID 60 V 9.3 mW 43 A Package Marking PG-TO220 FP 093N06N Maximum ratings, at T j=25 °C , unless otherwise specified Parameter Symbol Conditions Continuous drain c urrent ID T C=25 °C T C=100 °C Pu lsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=50 A, R GS=25 W Gate source voltage V GS Power d.


Infineon Technologies IPA093N06N3

issipation P tot T C=25 °C Operating and storage temperature T j, T stg IE C climatic category; DIN IEC 68-1 1)J- STD20 and JESD22 2) See figure 3 for mo re detailed information 3) See figure 1 3 for more detailed information Value Unit 43 A 31 172 43 mJ ±20 V 33 W -55 ... 175 °C 55/175/56 Re v. 2.1 page 1 2017-01-12 IPA093N06N3 G Parameter Symbol.


Infineon Technologies IPA093N06N3

Conditions Thermal characteristics The rmal resistance, junction - case R thJC Values Unit min. typ. max. - - 4 .6 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source b reakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 Gate threshold voltage V GS(th) V DS=V GS, I D=34 µA 2 Zero g ate voltage drain cu.

Part

IPA093N06N3

Description

Power Transistor



Feature


Type OptiMOSTM3 Power-Transistor Featur es • Ideal for high frequency switchi ng and sync. rec. • Optimized technol ogy for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) N-channel, normal level • 100% aval anche tested • Pb-free plating; RoHS compliant • Qualified according to JE DEC1) for target applications Type IP A093N06N3 G IPA093N06N3 G Prod.
Manufacture

Infineon Technologies

Datasheet
Download IPA093N06N3 Datasheet




 IPA093N06N3
Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPA093N06N3 G
IPA093N06N3 G
Product Summary
VDS
RDS(on),max
ID
60 V
9.3 mW
43 A
Package
Marking
PG-TO220 FP
093N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3)
E AS
I D=50 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Value
Unit
43
A
31
172
43
mJ
±20
V
33
W
-55 ... 175
°C
55/175/56
Rev. 2.1
page 1
2017-01-12




 IPA093N06N3
IPA093N06N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Values
Unit
min. typ. max.
-
-
4.6 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
Gate threshold voltage
V GS(th) V DS=V GS, I D=34 µA
2
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
V DS=60 V, V GS=0 V,
T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=40 A
-
Gate resistance
RG
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=40 A
26
-
-V
3
4
0.1
1 µA
10
100
1
100 nA
7.8
9.3 mW
0.9
-W
51
-S
Rev. 2.1
page 2
2017-01-12




 IPA093N06N3
IPA093N06N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=30 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=30 V, V GS=10 V,
-
t d(off)
I D=45 A, R G,ext=3.5 W
-
tf
-
2900
640
23
15
40
20
5
3900 pF
850
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Q gs
-
16
- nC
Gate to drain charge
Switching charge
Gate charge total
Q gd
-
Q sw
V DD=30 V, I D=40 A,
V GS=0 to 10 V
-
Qg
-
3
-
10
-
36
48
Gate plateau voltage
V plateau
-
5.5
-V
Output charge
Q oss
V DD=30 V, V GS=0 V
-
29
38 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=40 A,
T j=25 °C
t rr
V R=30 V, IF=45A,
Q rr
di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
-
-
43 A
-
-
172
-
1.0
1.2 V
-
45
- ns
-
40
- nC
Rev. 2.1
page 3
2017-01-12






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