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Power Transistor. IPB60R099CPA Datasheet

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Power Transistor. IPB60R099CPA Datasheet






IPB60R099CPA Transistor. Datasheet pdf. Equivalent




IPB60R099CPA Transistor. Datasheet pdf. Equivalent





Part

IPB60R099CPA

Description

Power Transistor



Feature


IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g ,typ 600 0.105 60 V Ω nC Features Worldwide best Rds,on in TO263 • Ul tra low gate charge • Extreme dv/dt r ated • High peak current capability Automotive AEC Q101 qualified • Gr een package (RoHS compliant) CoolMOS CP A is specially designed for: • DC/DC converters for Automotive Applicati.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R099CPA Datasheet


Infineon Technologies IPB60R099CPA

IPB60R099CPA; ons PG-TO263-3 Type IPB60R099CPA Packa ge PG-TO263-3-2 Marking 6R099A Maximu m ratings, at T j=25 °C, unless otherw ise specified Parameter Symbol Conditi ons ID T C=25 °C T C=100 °C Value 31 19 93 800 1.2 11 Unit A Continuous d rain current Pulsed drain current1) Av alanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t.


Infineon Technologies IPB60R099CPA

AR1),2) MOSFET dv /dt ruggedness Gate s ource voltage Power dissipation Operati ng temperature Storage temperature I D ,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V mJ A V/ns V W °C V DS=0...480 V static T C=25 °C 50 ±20 255 -40 ... 150 -40 ... 150 ww w.DataSheet4U.net Rev. 2.1 page 1 20 09-03-25 IPB60R099CPA.


Infineon Technologies IPB60R099CPA

Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuou s diode forward current Diode pulse cur rent1) Reverse diode dv /dt 3) Paramete r Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal charact eristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device o n PCB, minimal foot.

Part

IPB60R099CPA

Description

Power Transistor



Feature


IPB60R099CPA CoolMOS® Power Transistor Product Summary V DS R DS(on),max Q g ,typ 600 0.105 60 V Ω nC Features Worldwide best Rds,on in TO263 • Ul tra low gate charge • Extreme dv/dt r ated • High peak current capability Automotive AEC Q101 qualified • Gr een package (RoHS compliant) CoolMOS CP A is specially designed for: • DC/DC converters for Automotive Applicati.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R099CPA Datasheet




 IPB60R099CPA
CoolMOS® Power Transistor
Features
• Worldwide best Rds,on in TO263
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
IPB60R099CPA
Product Summary
V DS
R DS(on),max
Q g,typ
600 V
0.105
60 nC
PG-TO263-3
Type
IPB60R099CPA
Package
Marking
PG-TO263-3-2 6R099A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
I D,pulse
E AS
E AR
I AR
dv /dt
Gate source voltage
Power dissipation
Operating temperature
V GS
P tot
Tj
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
T C=25 °C
Storage temperature
T stg
Value
31
19
93
800
1.2
11
50
±20
255
-40 ... 150
-40 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
www.DRateaSvh. e2e.t41U.net
page 1
2009-03-25




 IPB60R099CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R099CPA
Value
18
93
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflow soldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area4)
MSL1, reflow acc. to
IPC-JEDEC J-STD-
020C
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
-
- 0.5 K/W
- 62
35 -
- 245 °C
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.2 mA
2.5
3
3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=18 A,
T j=25 °C
V GS=10 V, I D=18 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
- 5 µA
- 100 nA
0.09 0.105
0.24 -
1.3 -
Rev. 2.1
page 2
2009-03-25




 IPB60R099CPA
Parameter
Symbol Conditions
IPB60R099CPA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=18 A,
R G=3.3
-
-
-
-
-
-
-
-
2800
130
130
340
10
5
60
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=18 A,
V GS=0 to 10 V
-
-
-
-
14 - nC
20 -
60 80
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=18 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 450 - ns
- 12 - µC
- 70 - A
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) I SDI D, di /dt100A/µs,V DClink = 400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch
4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
page 3
2009-03-25






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