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Power Transistor. IPB60R165CP Datasheet

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Power Transistor. IPB60R165CP Datasheet






IPB60R165CP Transistor. Datasheet pdf. Equivalent




IPB60R165CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R165CP

Description

Power Transistor



Feature


IPB60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.165 Ω 39 nC PG-TO263 CoolMOS CP is specially designed.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R165CP Datasheet


Infineon Technologies IPB60R165CP

IPB60R165CP; for: • Hard switching topologies for Server and Telecom Type IPB60R165CP P ackage PG-TO263 Ordering Code SP000096 439 Marking 6R165P Maximum ratings, a t T j=25 °C, unless otherwise specifie d Parameter Continuous drain current Sy mbol Conditions ID T C=25 °C T C=100 C Pulsed drain current2) Avalanche ene rgy, single pulse Avalanche energy, rep etitive t AR2),3) Avala.


Infineon Technologies IPB60R165CP

nche current, repetitive t AR2),3) MOSFE T dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temp erature P tot T j, T stg T C=25 °C T C =25 °C I D=7.9 A, V DD=50 V I D=7.9 A, V DD=50 V Value 21 13 61 522 0.79 7.9 50 ±20 ±30 192 -55 ... 150 W °C A V/ ns V mJ Unit A www.Dat.


Infineon Technologies IPB60R165CP

aSheet4U.net Rev. 2.1 page 1 2009-06- 05 IPB60R165CP Maximum ratings, at T j =25 °C, unless otherwise specified Par ameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,puls e dv /dt T C=25 °C Value 12 61 15 V/ns Unit A Parameter Symbol Conditions m in. Values typ. max. Unit Thermal ch aracteristics Therma.

Part

IPB60R165CP

Description

Power Transistor



Feature


IPB60R165CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.165 Ω 39 nC PG-TO263 CoolMOS CP is specially designed.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R165CP Datasheet




 IPB60R165CP
CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R165CP
650 V
0.165 Ω
39 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching topologies for Server and Telecom
Type
IPB60R165CP
Package
PG-TO263
Ordering Code
SP000096439
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.9 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=7.9 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
dv /dt
V GS
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
21
13
61
522
0.79
7.9
50
±20
±30
192
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
www.DRateavS.he2e.t14U.net
page 1
2009-06-05




 IPB60R165CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
dv /dt
T C=25 °C
IPB60R165CP
Value
12
61
15
Unit
A
V/ns
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
reflowsoldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL 1
-
-
-
- 0.65 K/W
- 62
35
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
600
V GS(th) V DS=V GS, I D=0.79 mA 2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=12 A,
T j=25 °C
V GS=10 V, I D=12 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 1 µA
10 -
-
0.15
100 nA
0.165 Ω
0.40
1.9
-
-Ω
Rev. 2.1
page 2
2007-11-22




 IPB60R165CP
IPB60R165CP
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=12 A,
R G=3.3 Ω
-
-
-
-
-
-
-
-
2000
100
83
220
12
5
50
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=400 V, I D=12 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
9 - nC
13.0
-
39 52
5.0 - V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=12 A,
T j=25 °C
- 0.9 1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 390 - ns
- 7.5 - µC
- 38 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISDID, di/dt200A/µs,VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.1
page 3
2007-11-22






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