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Power Transistor. IPB60R199CP Datasheet

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Power Transistor. IPB60R199CP Datasheet






IPB60R199CP Transistor. Datasheet pdf. Equivalent




IPB60R199CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R199CP

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R199CP Datasheet


Infineon Technologies IPB60R199CP

IPB60R199CP; CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rate d • High peak current capability • Qualified according to JEDEC1) for targ et applications • Pb-free lead platin g; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ IPB60R1 99CP 650 V 0.199 Ω 32 nC PG-TO263 C oolMOS CP is specially designed f.


Infineon Technologies IPB60R199CP

or: • Hard switching topologies, for S erver and Telecom Type IPB60R199CP Pa ckage PG-TO263 Ordering Code SP0002232 56 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pu lsed drain current2) Avalanche energy, single pulse Symbol Conditions ID I D ,pulse E AS T C=25 °C T C=100 °C T C =25 °C I D=6.6 A, V DD=.


Infineon Technologies IPB60R199CP

50 V Avalanche energy, repetitive t 2),3) AR E AR I D=6.6 A, V DD=50 V Avalanche current, repetitive t 2), 3) AR I AR MOSFET dv /dt ruggedness G ate source voltage Power dissipation Op erating and storage temperature dv /dt V D .



Part

IPB60R199CP

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPB60R199CP Datasheet




 IPB60R199CP
CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R199CP
650 V
0.199
32 nC
PG-TO263
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
IPB60R199CP
Package
PG-TO263
Ordering Code
SP000223256
Marking
6R199P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=6.6 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=6.6 A, V DD=50 V
Avalanche
current,
repetitive
t
2),3)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
dv /dt V DS=0...480 V
V GS static
AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
Value
16
10
51
436
0.66
6.6
50
±20
±30
139
-55 ... 150
Rev. 2.2
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2011-12-20





 IPB60R199CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R199CP
Value
9.9
51
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
wave- & reflowsolderin allowed
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL1
-
-
-
-
- 0.9 K/W
- 62
35 -
- 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=0.66 mA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
600
2.5
-
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
R DS(on)
RG
V GS=20 V, V DS=0 V
V GS=10 V, I D=9.9 A,
T j=25 °C
V GS=10 V, I D=9.9 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
-
3
-
10
-
0.18
0.49
2
-V
3.5
1 µA
-
100 nA
0.199
-
-
Rev. 2.2
page 2
2011-12-20





 IPB60R199CP
Parameter
Dynamic characteristics
Symbol Conditions
IPB60R199CP
min.
Values
typ.
Unit
max.
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=9.9 A,
R G=3.3
-
-
-
-
-
-
-
-
1520
72
69
180
10
5
50
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=9.9 A,
V GS=0 to 10 V
-
-
-
-
8 - nC
11 -
32 43
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=9.9 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 340 - ns
- 5.5 - µC
- 33 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISDID, di/dt200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
6) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2011-12-20



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