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Power Transistor. IPB60R250CP Datasheet

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Power Transistor. IPB60R250CP Datasheet






IPB60R250CP Transistor. Datasheet pdf. Equivalent




IPB60R250CP Transistor. Datasheet pdf. Equivalent





Part

IPB60R250CP

Description

Power Transistor



Feature


IPB60R250CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.250 Ω 26 nC P-TO263-3 CoolMOS is designed for: Hard .
Manufacture

Infineon Technologies

Datasheet
Download IPB60R250CP Datasheet


Infineon Technologies IPB60R250CP

IPB60R250CP; switching SMPS topologies Type IPB60R25 0CP Package P-TO263 Marking 60R250P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuou s drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain curre nt2) Avalanche energy, single pulse Ava lanche energy, repetitive t AR2),3) Ava lanche current, repetitive t AR2),3) MO SFET dv /dt ruggednes.


Infineon Technologies IPB60R250CP

s Gate source voltage I D,pulse E AS E A R I AR dv /dt V GS V DS=0...480 V stati c AC (f >1 Hz) Power dissipation Operat ing and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=5.2 A, V DD=50 V I D=5.2 A, V DD=50 V Value 12 8 40 345 0.52 5.2 50 ±20 ±30 104 -55 ... 150 W °C A V/ns V mJ Unit A www. DataSheet4U.net Rev. 2.0 page 1 2008 -07-11 IPB60R250CP Max.


Infineon Technologies IPB60R250CP

imum ratings, at T j=25 °C, unless othe rwise specified Parameter Continuous di ode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Con ditions IS I S,pulse dv /dt T C=25 °C Value 7.8 40 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. ma x. Unit Thermal characteristics Therm al resistance, junction - case Thermal resistance, junction.

Part

IPB60R250CP

Description

Power Transistor



Feature


IPB60R250CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.250 Ω 26 nC P-TO263-3 CoolMOS is designed for: Hard .
Manufacture

Infineon Technologies

Datasheet
Download IPB60R250CP Datasheet




 IPB60R250CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPB60R250CP
650 V
0.250
26 nC
P-TO263-3
CoolMOS is designed for:
Hard switching SMPS topologies
Type
IPB60R250CP
Package
P-TO263
Marking
60R250P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=5.2 A, V DD=50 V
I D=5.2 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
12
8
40
345
0.52
5.2
50
±20
±30
104
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
www.DRateavS.he2e.t04U.net
page 1
2008-07-11




 IPB60R250CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB60R250CP
Value
7.8
40
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
- - 1.2 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0,44 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=7.8 A,
T j=25 °C
V GS=10 V, I D=7.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.22 0.25
0.59
1.3
-
-
Rev. 2.0
page 2
2008-07-11




 IPB60R250CP
Parameter
Dynamic characteristics
Symbol Conditions
IPB60R250CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=7.8 A,
R G=23.1
-
-
-
-
-
-
-
-
1200
54
55
150
40
17
110
12
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=7.8 A,
V GS=0 to 10 V
-
-
-
-
6 - nC
9-
26 35
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=7.8 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 330 - ns
- 4.5 - µC
- 27 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISDID, di/dt200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2008-07-11






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