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Power Transistor. IPB60R299CPA Datasheet

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Power Transistor. IPB60R299CPA Datasheet






IPB60R299CPA Transistor. Datasheet pdf. Equivalent




IPB60R299CPA Transistor. Datasheet pdf. Equivalent





Part

IPB60R299CPA

Description

Power Transistor



Feature


IPB60R299CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g ,typ 600 V 0.299 Ω 22 nC Features Lowest figure-of-merit Ron x Qg • U ltra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • G reen package (RoHS compliant) CoolMOS C PA is specially designed for: • DC/DC converters for Automotive Applic.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R299CPA Datasheet


Infineon Technologies IPB60R299CPA

IPB60R299CPA; ations PG-TO263-3 Type IPB60R299CPA Pa ckage PG-TO263-3 Marking 6R299A Maxim um ratings, at T j=25 °C, unless other wise specified Parameter Continuous dra in current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanch e energy, repetitive t AR1),2) Avalanch e current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gat.


Infineon Technologies IPB60R299CPA

e source voltage Power dissipation Opera ting temperature Storage temperature I D,pulse E AS E AR I AR dv /dt V GS P to t Tj T stg V DS=0...480 V static T C=25 °C T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V Value 11 7 34 290 0. 44 4.4 50 ±20 96 -40 ... 150 -40 ... 1 50 A V/ns V W °C mJ Unit A www.DataSh eet4U.net Rev. 2.0 page 1 2009-09-09 IPB60R299CPA Maximum.


Infineon Technologies IPB60R299CPA

ratings, at T j=25 °C, unless otherwis e specified Parameter Continuous diode forward current Diode pulse current1) R everse diode dv /dt 3) Symbol Condition s IS I S,pulse dv /dt T C=25 °C Value 6.6 34 15 V/ns Unit A Parameter Symbo l Conditions min. Values typ. max. Un it Thermal characteristics Thermal res istance, junction - case R thJC R thJA Thermal resistance, .

Part

IPB60R299CPA

Description

Power Transistor



Feature


IPB60R299CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g ,typ 600 V 0.299 Ω 22 nC Features Lowest figure-of-merit Ron x Qg • U ltra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • G reen package (RoHS compliant) CoolMOS C PA is specially designed for: • DC/DC converters for Automotive Applic.
Manufacture

Infineon Technologies

Datasheet
Download IPB60R299CPA Datasheet




 IPB60R299CPA
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit Ron x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Product Summary
V DS
R DS(on),max
Q g,typ
IPB60R299CPA
600 V
0.299 Ω
22 nC
PG-TO263-3
Type
IPB60R299CPA
Package
PG-TO263-3
Marking
6R299A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1),2)
AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating temperature
Storage temperature
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse
E AS
E AR
T C=25 °C
I D=4.4 A, V DD=50 V
I D=4.4 A, V DD=50 V
I AR
dv /dt
V DS=0...480 V
V GS
P tot
static
T C=25 °C
Tj
T stg
www.DRateaSvh. e2e.t40U.net
page 1
Value
11
7
34
290
0.44
4.4
50
±20
96
-40 ... 150
-40 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2009-09-09




 IPB60R299CPA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current1)
Reverse diode dv /dt 3)
Symbol Conditions
IS
I S,pulse
dv /dt
T C=25 °C
IPB60R299CPA
Value
6.6
34
15
Unit
A
V/ns
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflow soldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area4)
MSL 1
-
-
-
-
- 1.3 K/W
- 62
35 -
- 245 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
600
V GS(th) V DS=V GS, I D=0,44 mA 2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=6.6 A,
T j=25 °C
V GS=10 V, I D=6.6 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
- -V
3 3.5
- 1 µA
- 100 nA
0.27 0.299 Ω
0.73
1.9 - Ω
Rev. 2.0
page 2
2009-09-09




 IPB60R299CPA
IPB60R299CPA
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=6.6 A,
R G=4.3 Ω
-
-
-
-
-
-
-
-
1100
60
46
120
10
5
40
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd V DD=400 V, I D=6.6 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
5 - nC
7.6 -
22 29
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=6.6 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 300 - ns
- 3.9 - µC
- 26 - A
1) Pulse width t p limited by T j,max
2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
3) I SDI D, di /dt 200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low side and high side switch.
4) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2009-09-09






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