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Power Transistor. IPD600N25N3G Datasheet

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Power Transistor. IPD600N25N3G Datasheet






IPD600N25N3G Transistor. Datasheet pdf. Equivalent




IPD600N25N3G Transistor. Datasheet pdf. Equivalent





Part

IPD600N25N3G

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPD600N25N3G Datasheet


Infineon Technologies IPD600N25N3G

IPD600N25N3G; IPD600N25N3 G OptiMOSTM3 Power-Transist or Features • N-channel, normal level • Excellent gate charge x R DS(on) p roduct (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on), max ID • 175 °C operating temperatu re • Pb-free lead plating; RoHS comp liant • Qualified according to JEDEC 1) for target application • Halogen- free according to IEC61249-2-21 .


Infineon Technologies IPD600N25N3G

• Ideal for high-frequency switching a nd synchronous rectification Type IPD 600N25N3 G 250 V 60 mW 25 A Package M arking PG-TO252-3 600N25N Maximum rat ings, at T j=25 °C, unless otherwise s pecified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single puls e ID I D,pulse E AS T C=25 °C T C=10 0 °C T C=25 °C I D=25 .


Infineon Technologies IPD600N25N3G

A, R GS=25 W Reverse diode dv /dt dv / dt Gate source voltage V GS Power di ssipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-S TD20 and JESD22 2) See figure 3 Rev. 2 .3 page 1 Value 25 18 100 210 10 ±20 136 -55 ... 175 55/175/56 Unit A mJ k V/µs V W °C 2011-07-14 IPD600N25N3 G Parameter Symbol C.



Part

IPD600N25N3G

Description

Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPD600N25N3G Datasheet




 IPD600N25N3G
IPD600N25N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPD600N25N3 G
250 V
60 mW
25 A
Package
Marking
PG-TO252-3
600N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=25 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Rev. 2.3
page 1
Value
25
18
100
210
10
±20
136
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2011-07-14





 IPD600N25N3G
IPD600N25N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 75
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=90 µA
I DSS
V DS=200 V, V GS=0 V,
T j=25 °C
250
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
I GSS
V DS=200 V, V GS=0 V,
T j=125 °C
V GS=20 V, V DS=0 V
-
-
10 100
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=25 A
-
51 60 mW
Gate resistance
Transconductance
R G - 2.5
g fs
|V DS|>2|I D|R DS(on)max,
I D=25 A
24
47
-W
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.3
page 2
2011-07-14





 IPD600N25N3G
IPD600N25N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=12 A,
R G=1.6 W
-
-
-
-
-
-
-
1770
101
3
10
10
22
8
2350 pF
134
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
V DD=100 V, I D=12 A,
V GS=0 to 10 V
Qg
V plateau
Q oss
V DD=100 V, V GS=0 V
-
-
-
-
-
-
8 - nC
2-
5-
22 29
4.3 - V
45 60 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=25 A,
T j=25 °C
t rr V R=100 V, I F=12A,
Q rr di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
- - 25 A
- - 100
- 0.9 1.2 V
- 114
ns
- 700 - nC
Rev. 2.3
page 3
2011-07-14



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