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Power Transistor. IPP60R125CP Datasheet

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Power Transistor. IPP60R125CP Datasheet






IPP60R125CP Transistor. Datasheet pdf. Equivalent




IPP60R125CP Transistor. Datasheet pdf. Equivalent





Part

IPP60R125CP

Description

Power Transistor



Feature


IPP60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 nC PG-TO220 CoolMOS CP is specially designe.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R125CP Datasheet


Infineon Technologies IPP60R125CP

IPP60R125CP; d for: • Hard switching topologies, fo r Server and Telecom Type IPP60R125CP Package PG-TO220 Ordering Code SP0000 88488 Marking 6R125P Maximum ratings, at T j=25 °C, unless otherwise specif ied Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche e nergy, single pulse Avalanche energy, r epetitive t AR2),3) Ava.


Infineon Technologies IPP60R125CP

lanche current, repetitive t AR2),3) MOS FET dv /dt ruggedness Gate source volta ge I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Pow er dissipation Operating and storage te mperature Mounting torque Rev. 2.2 P to t T j, T stg M3 and M3.5 screws page 1 T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 25 16 82 7 08 1.2 11 50 ±20 ±30.


Infineon Technologies IPP60R125CP

208 -55 ... 150 60 W °C Ncm 2007-08-28 A V/ns V mJ Unit A www.DataSheet4U.ne t IPP60R125CP Maximum ratings, at T j= 25 °C, unless otherwise specified Para meter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 16 82 15 V/ns Unit A Parameter Symbol Conditions mi n. Values typ. max. .

Part

IPP60R125CP

Description

Power Transistor



Feature


IPP60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R O NxQg • Ultra low gate charge • Extr eme dv/dt rated • High peak current c apability • Qualified according to JE DEC1) for target applications • Pb-fr ee lead plating; RoHS compliant Produc t Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.125 Ω 53 nC PG-TO220 CoolMOS CP is specially designe.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R125CP Datasheet




 IPP60R125CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPP60R125CP
650 V
0.125
53 nC
PG-TO220
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
IPP60R125CP
Package
PG-TO220
Ordering Code
SP000088488
Marking
6R125P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
www.DRateavS.he2e.t24U.net
page 1
Value
25
16
82
708
1.2
11
50
±20
±30
208
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-08-28




 IPP60R125CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Symbol Conditions
IS
I S,pulse
T C=25 °C
Reverse diode dv /dt 4)
dv /dt
IPP60R125CP
Value
16
82
15
Unit
A
V/ns
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
- - 0.6 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
600
V GS(th) V DS=V GS, I D=1.1 mA
2.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=16 A,
T j=25 °C
V GS=10 V, I D=16 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- -V
3 3.5
- 2 µA
20 -
- 100 nA
0.11 0.125
0.30
2.1
-
-
Rev. 2.2
page 2
2007-08-28




 IPP60R125CP
Parameter
Dynamic characteristics
Symbol Conditions
IPP60R125CP
min.
Values
typ.
Unit
max.
Input capacitance
C iss
Output capacitance
Effective output capacitance, energy
related5)
Effective output capacitance, time
related6)
Turn-on delay time
C oss
C o(er)
C o(tr)
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=16 A,
R G=3.3
-
-
-
-
-
-
-
-
2500
120
110
300
15
5
50
5
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=16 A,
V GS=0 to 10 V
-
-
-
-
12 - nC
18 -
53 70
5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=16 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 430 - ns
- 9 - µC
- 42 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) ISD=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.2
page 3
2007-08-28






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