DatasheetsPDF.com

Power Transistor. IPP60R160C6 Datasheet

DatasheetsPDF.com

Power Transistor. IPP60R160C6 Datasheet






IPP60R160C6 Transistor. Datasheet pdf. Equivalent




IPP60R160C6 Transistor. Datasheet pdf. Equivalent





Part

IPP60R160C6

Description

Power Transistor



Feature


MOSFET MetalOxideSemiconductorFieldE ffectTransistor CoolMOS™C6600V 600 VCoolMOS™C6PowerTransistor IPx60R 160C6 DataSheet Rev.2.2 Final PowerM anagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description CoolM OS" is a revolutionary technology for h igh voltage power MOSFETs, designed acc ording to the superjunction (SJ) princi ple and pioneered by I.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R160C6 Datasheet


Infineon Technologies IPP60R160C6

IPP60R160C6; nfineon Technologies. CoolMOS" C6 series combines the experience of the leading SJ MOSFET supplier with high class inn ovation. The offered devices provide al l benefits of a fast switching SJ MOSFE T while not sacrificing ease of use. Ex tremely low switching and conduction lo sses make switching applications even m ore efficient, more compact, lighter, a nd cooler. Feature.


Infineon Technologies IPP60R160C6

s • Extremely low losses due to very l ow FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/ drive • JEDEC1) qualified, Pb-free pl ating, Halogen free Applications PFC st ages, hard switching PWM stages and res onant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Light ing, Server, Telecom and UPS. IPA60R16 0C6, IPB60R160C6 IPP60R160.


Infineon Technologies IPP60R160C6

C6 IPW60R160C6 drain pin 2 gate pin 1 source pin 3 Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is ge nerally recommended. Table 1 Key Perfo rmance Parameters Parameter Value Un it VDS @ Tj,max RDS(on),max Qg,typ ID, pulse Eoss @ 400V Body diode di/dt 650 0.16 75 70 6 500 V ! nC A µJ A/µs Type / Ordering Code.

Part

IPP60R160C6

Description

Power Transistor



Feature


MOSFET MetalOxideSemiconductorFieldE ffectTransistor CoolMOS™C6600V 600 VCoolMOS™C6PowerTransistor IPx60R 160C6 DataSheet Rev.2.2 Final PowerM anagement&Multimarket 600V CoolMOS" C6 Power Transistor 1 Description CoolM OS" is a revolutionary technology for h igh voltage power MOSFETs, designed acc ording to the superjunction (SJ) princi ple and pioneered by I.
Manufacture

Infineon Technologies

Datasheet
Download IPP60R160C6 Datasheet




 IPP60R160C6
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C6600V
600VCoolMOS™C6PowerTransistor
IPx60R160C6
DataSheet
Rev.2.3
Final
PowerManagement&Multimarket




 IPP60R160C6
600V CoolMOS" C6 Power Transistor
1 Description
CoolMOS" is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS" C6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IPA60R160C6, IPB60R160C6
IPP60R160C6 IPW60R160C6
drain
pin 2
gate
pin 1
source
pin 3
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.16
75
70
6
500
V
!
nC
A
µJ
A/µs
Type / Ordering Code
IPW60R160C6
IPB60R160C6
IPP60R160C6
IPA60R160C6
Package
PG-TO247
PG-TO263
PG-TO220
PG-TO220 FullPAK
1) J-STD20 and JESD22
Marking
6R160C6
Related Links
IFX C6 Product Brief
IFX C6 Portfolio
IFX CoolMOS Webpage
IFX Design tools
Rev. 2.3
Page 2
2018-02-26




 IPP60R160C6
600V CoolMOS" C6 Power Transistor
IPx60R160C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Rev. 2.3
Page 3
2018-02-26






Recommended third-party IPP60R160C6 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)