DatasheetsPDF.com

Power Transistor. IPW65R070C6 Datasheet

DatasheetsPDF.com

Power Transistor. IPW65R070C6 Datasheet






IPW65R070C6 Transistor. Datasheet pdf. Equivalent




IPW65R070C6 Transistor. Datasheet pdf. Equivalent





Part

IPW65R070C6

Description

Power Transistor



Feature


MOSFET Metal Oxide Semiconductor Field E ffect Transistor CoolMOS C6 650V CoolM OS™ C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final www.DataSheet4U.net Industrial & Multi market 650V CoolMOS™ C6 Power Transi stor IPW65R070C6 1 Description Cool MOS™ is a revolutionary technology fo r high voltage power MOSFETs, designed according to the superju.
Manufacture

Infineon Technologies

Datasheet
Download IPW65R070C6 Datasheet


Infineon Technologies IPW65R070C6

IPW65R070C6; nction (SJ) principle and pioneered by I nfineon Technologies. CoolMOS™ C6 ser ies combines the experience of the lead ing SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MO SFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications eve n more efficient, mo.


Infineon Technologies IPW65R070C6

re compact, lighter, and cooler. drain p in 2 Features • • • • • Extr emely low losses due to very low FOM Rd son*Qg and Eoss Very high commutation r uggedness Easy to use/drive Qualified f or industrial grade applications accord ing to JEDEC1) Pb-free plating, Halogen free mold compound gate pin 1 source pin 3 Applications PFC stages, hard sw itching PWM stages and reson.


Infineon Technologies IPW65R070C6

ant switching PWM stages for e.g. PC Sil verbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: F or MOSFET paralleling the use of ferrit e beads on the gate or separate totem p oles is generally recommended. Table 1 Parameter Key Performance Parameters Value 700 0.07 170 150 13 300 Package P G-TO247 Unit V  nC A µJ A/µs Marki ng 65C6070 Related Lin.

Part

IPW65R070C6

Description

Power Transistor



Feature


MOSFET Metal Oxide Semiconductor Field E ffect Transistor CoolMOS C6 650V CoolM OS™ C6 Power Transistor IPW65R070C6 Data Sheet Rev. 2.0, 2011-03-15 Final www.DataSheet4U.net Industrial & Multi market 650V CoolMOS™ C6 Power Transi stor IPW65R070C6 1 Description Cool MOS™ is a revolutionary technology fo r high voltage power MOSFETs, designed according to the superju.
Manufacture

Infineon Technologies

Datasheet
Download IPW65R070C6 Datasheet




 IPW65R070C6
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Data Sheet
Rev. 2.0, 2011-03-15
Final
Industrial & Multimarket
www.DataSheet4U.net




 IPW65R070C6
650V CoolMOS™ C6 Power Transistor
1 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by Infineon
Technologies. CoolMOS™ C6 series combines the experience of the leading SJ
MOSFET supplier with high class innovation. The offered devices provide all
benefits of a fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching applications
even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC1)
• Pb-free plating, Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for
e.g. PC Silverbox, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
IPW65R070C6
drain
pin 2
gate
pin 1
source
pin 3
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
700
0.07
170
150
13
300
V
nC
A
µJ
A/µs
Type
IPW65R070C6
Package
PG-TO247
Related Links
IFX CoolMOS Webpage
IFX Design tools
Marking
65C6070
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2011-03-15




 IPW65R070C6
650V CoolMOS™ C6 Power Transistor
IPW65R070C6
Table of Contents
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3 Rev. 2.0, 2011-03-15






Recommended third-party IPW65R070C6 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)