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Power MOSFET. NCV8440 Datasheet

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Power MOSFET. NCV8440 Datasheet






NCV8440 MOSFET. Datasheet pdf. Equivalent




NCV8440 MOSFET. Datasheet pdf. Equivalent





Part

NCV8440

Description

Protected Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NCV8440 Datasheet


ON Semiconductor NCV8440

NCV8440; NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Featu res • Diode Clamp Between Gate and So urce • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Low er or Higher RDS(on) • Internal Serie s Gate Resistance • These are Pb−Fr ee Devices Benefits • High Energy Capa.


ON Semiconductor NCV8440

bility for Inductive Loads • Low Switc hing Noise Generation Applications • Automotive and Industrial Markets: Sole noid Drivers, Lamp Drivers, Small Motor Drivers • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable www.onsemi.com VDSS (Clamped) 52 V RD S(ON) TYP 95 mW @ 10 V ID.


ON Semiconductor NCV8440

MAX 2.6 A Drain (Pins 2, 4) Gate (Pin 1) Overvoltage Protection ESD Protec tion Source (Pin 3) MARKING DIAGRAM D RAIN SOT−223 CASE 318E STYLE 3 1 = G ate 2 = Drain 3 = Source 4 AYW xxxxx G G 1 23 GATE SOURCE DRAIN A Y W x xxxx G = Assembly Location = Year = Wo rk Week = V8440 or 8440A = Pb−Free Pa ckage (Note: Microdot may be in either location) ORDERING I.



Part

NCV8440

Description

Protected Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NCV8440 Datasheet




 NCV8440
NCV8440, NCV8440A
Protected Power MOSFET
2.6 A, 52 V, NChannel, Logic Level,
Clamped MOSFET w/ ESD Protection
Features
Diode Clamp Between Gate and Source
ESD Protection Human Body Model 5000 V
Active OverVoltage Gate to Drain Clamp
Scalable to Lower or Higher RDS(on)
Internal Series Gate Resistance
These are PbFree Devices
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
www.onsemi.com
VDSS
(Clamped)
52 V
RDS(ON) TYP
95 mW @ 10 V
ID MAX
2.6 A
Drain (Pins 2, 4)
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
SOT223
CASE 318E
STYLE 3
1 = Gate
2 = Drain
3 = Source
4
AYW
xxxxx G
G
1 23
GATE
SOURCE
DRAIN
A
Y
W
xxxxx
G
= Assembly Location
= Year
= Work Week
= V8440 or 8440A
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
October, 2018 Rev. 8
Publication Order Number:
NCV8440/D





 NCV8440
NCV8440, NCV8440A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
GatetoSource Voltage Continuous
Drain Current
Total Power Dissipation @ TA = 25°C (Note 1)
Operating and Storage Temperature Range
Continuous @ TA = 25°C
Single Pulse (tp = 10 ms) (Note 1)
Single Pulse DraintoSource Avalanche Energy
(VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W)
VDSS
VGS
ID
IDM
PD
TJ, Tstg
EAS
5259
V
±15
V
2.6
A
10
1.69
W
55 to 150
°C
110
mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
Thermal Resistance,
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10 Seconds
VLD
RqJA
RqJA
TL
60
V
°C/W
74
169
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. When surface mounted to a FR4 board using 1pad size, (Cu area 1.127 in2).
2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2).
+
ID
IG
+
VGS
GATE
DRAIN
SOURCE
VDS
Figure 1. Voltage and Current Convention
www.onsemi.com
2





 NCV8440
NCV8440, NCV8440A
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)
(VGS = 0 V, ID = 1.0 mA, TJ = 40°C to 125°C) (Note 4)
Temperature Coefficient (Negative)
V(BR)DSS
52
50.8
55
54
9.3
59
V
59.5
V
mV/°C
Zero Gate Voltage Drain Current
(VDS = 40 V, VGS = 0 V)
(VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4)
IDSS
mA
10
25
GateBody Leakage Current
(VGS = ±8 V, VDS = 0 V)
(VGS = ±14 V, VDS = 0 V)
IGSS
mA
±10
±35
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 100 mA)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.1
1.5
1.9
V
4.1
mV/°C
Static DraintoSource OnResistance (Note 3)
(VGS = 3.5 V, ID = 0.6 A)
(VGS = 4.0 V, ID = 1.5 A)
(VGS = 10 V, ID = 2.6 A)
Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)
DYNAMIC CHARACTERISTICS
RDS(on)
gFS
mW
150
180
135
160
95
110
3.8
Mhos
Input Capacitance
Output Capacitance
Transfer Capacitance
VDS = 35 V, VGS = 0 V,
f = 10 kHz
Ciss
Coss
Crss
155
pF
60
25
Input Capacitance
Output Capacitance
Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 10 kHz
Ciss
Coss
Crss
170
pF
70
30
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Not subject to production testing.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
3



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