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Power MOSFET. NTD4969N Datasheet

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Power MOSFET. NTD4969N Datasheet






NTD4969N MOSFET. Datasheet pdf. Equivalent




NTD4969N MOSFET. Datasheet pdf. Equivalent





Part

NTD4969N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTD4969N Datasheet


ON Semiconductor NTD4969N

NTD4969N; NTD4969N Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to M inimize Driver Losses Optimized Gate Ch arge to Minimize Switching Losses Three Package Variations for Design Flexibil ity These Devices are Pb−Free, Haloge n Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V.


ON Semiconductor NTD4969N

RDS(ON) MAX 9.0 mW @ 10 V 19 mW @ 4.5 V D ID MAX 41 A Applications • CPU P ower Delivery • DC−DC Converters MA XIMUM RATINGS (TJ = 25°C unless otherw ise stated) Parameter Drain−to−Sour ce Voltage Gate−to−Source Voltage C ontinuous Drain Current RqJA (Note 1) P ower Dissipation RqJA (Note 1) Continuo us Drain Current RqJA (Note 2) Power Di ssipation RqJA (Note 2) Continuou.


ON Semiconductor NTD4969N

s Drain Current RqJC (Note 1) Power Diss ipation RqJC (Note 1) Pulsed Drain Curr ent tp=10ms Steady State TA = 25°C TA = 100°C TA = 25°C TA = 25°C TA = 100 °C TA = 25°C TC = 25°C TC = 100°C T C = 25°C TA = 25°C TA = 25°C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 12 .7 9.0 2.56 9.4 6.6 1.38 41 29 26.3 150 40 −55 to +175 24 6.0 18 W A .



Part

NTD4969N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTD4969N Datasheet




 NTD4969N
NTD4969N
Power MOSFET
30 V, 41 A, Single NChannel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
12.7
9.0
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
TA = 25°C
TC = 25°C
TC = 100°C
PD
ID
PD
ID
2.56 W
9.4 A
6.6
1.38 W
41 A
29
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
26.3 W
Pulsed Drain
Current
tp=10ms TA = 25°C
IDM
150 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 19 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
40
55 to
+175
24
6.0
18
A
°C
A
V/ns
mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.0 mW @ 10 V
19 mW @ 4.5 V
D
ID MAX
41 A
G
S
NCHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4969N = Device Code
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
www.Dat©aSSheemeitc4oUnd.uncetotr Components Industries, LLC, 2011
April, 2011 Rev. 1
1
Publication Order Number:
NTD4969N/D





 NTD4969N
NTD4969N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoTAB (Drain)
JunctiontoAmbient – Steady State (Note 3)
JunctiontoAmbient – Steady State (Note 4)
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJCTAB
RqJA
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 30 A
VGS = 10 V, VDS = 15 V, ID = 30 A
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Min
30
1.5
Value
5.7
4.3
58.6
108.6
Unit
°C/W
Typ Max Unit
V
17 mV/°C
1.0
10
±100
mA
nA
1.8 2.5
V
4.5 mV/°C
6.9 9.0
6.9
13.6 19 mW
13.2
36 S
837
347
180
9.0
1.42
2.8
4.8
16.5
pF
nC
nC
10
27
13.3 ns
6.4
http://onsemi.com
2





 NTD4969N
NTD4969N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
6.5
20.2
17.2
4.2
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS
=
0
V, dIS/dt
IS = 30
=
A
100
A/ms,
0.91 1.1
0.82
20.8
9.8
11
8.0
Source Inductance (Note 7)
LS
Drain Inductance, DPAK
LD
Drain Inductance, IPAK (Note 7)
LD
TA = 25°C
Gate Inductance (Note 7)
LG
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
2.85
0.0164
1.88
4.9
1.0
2.2
Unit
ns
V
ns
nC
nH
W
ORDERING INFORMATION
Device
Package
Shipping
NTD4969NT4G
DPAK
(PbFree)
2500 / Tape & Reel
NTD4969N1G
IPAK
(PbFree)
75 Units / Rail
NTD4969N35G
IPAK Trimmed Lead
(PbFree)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3



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