NTMS4916N Power MOSFET
Features
30 V, 11.6 A, N−Channel, SO−8
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
http://onsemi.com
V(BR)DSS 30 V RDS(ON) MAX...
