DatasheetsPDF.com

Power MOSFET. NTMS4916N Datasheet

DatasheetsPDF.com

Power MOSFET. NTMS4916N Datasheet






NTMS4916N MOSFET. Datasheet pdf. Equivalent




NTMS4916N MOSFET. Datasheet pdf. Equivalent





Part

NTMS4916N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTMS4916N Datasheet


ON Semiconductor NTMS4916N

NTMS4916N; NTMS4916N Power MOSFET Features 30 V, 1 1.6 A, N−Channel, SO−8 • • • • • Low RDS(on) to Minimize Conduct ion Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices ar e Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V (BR)DSS 30 V RDS(ON) MAX 9 mW @ 10.


ON Semiconductor NTMS4916N

V 12 mW @ 4.5 V N−Channel ID MAX 11.6 A Applications • DC−DC Converter s • Printers MAXIMUM RATINGS (TJ = 25 °C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to Source Voltage Continuous Drain Curren t RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2 ) Continuous Drain Current RqJA, t .


ON Semiconductor NTMS4916N

v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current S teady State Steady State Steady State S teady State Steady State TA = 25°C TA = 70°C TA = 25°C TA = 25°C TA = 70° C TA = 25°C TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 9.4 7.5 1.30 7.8 6.2 0.89 11.6 9.3 1.98 14 5 −55 to 150 2.5 40.5 W A °C.



Part

NTMS4916N

Description

Power MOSFET

Manufacture

ON Semiconductor

Datasheet
Download NTMS4916N Datasheet




 NTMS4916N
NTMS4916N
Power MOSFET
30 V, 11.6 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Steady
State
Power Dissipation
(Note 1)
RqJA
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
9.4
7.5
1.30
V
V
A
W
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 70°C
ID
7.8 A
6.2
Power Dissipation
(Note 2)
RqJA
TA = 25°C PD 0.89 W
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
Steady
State
TA = 25°C
TA = 70°C
ID
11.6 A
9.3
Power Dissipation
Steady TA = 25°C PD 1.98 W
RqJA, t v 10 s(Note 1) State
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
145 A
Operating Junction and Storage Temperature
TTsJtg,
55 to °C
150
Source Current (Body Diode)
IS 2.5 A
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
EAS
40.5 mJ
IL = 9 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
96 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
JunctiontoFoot (Drain)
RqJA
RqJF
63
24.5
JunctiontoAmbient – Steady State (Note 2)
RqJA
141
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9 mW @ 10 V
12 mW @ 4.5 V
ID MAX
11.6 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4916N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4916NR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.Dat©AaSpShreeimle,itc24o0Un1d.u0ncetotr
Components
Rev. 0
Industries,
LLC,
2010
1
Publication Order Number:
NTMS4916N/D





 NTMS4916N
NTMS4916N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 30 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 10 A
VDS = 1.5 V, ID = 7.5 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 7.5 A
VGS = 10 V, VDS = 15 V, ID = 7.5 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 2.0 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.0 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
Typ Max Unit
V
16 mV/°C
1.0
10
±100
mA
nA
1.7 2.5 V
5 mV/°C
6.75 9.0 mW
9.0 12
23 S
1376
401
205
15
2.44
4
6.5
28
pF
nC
nC
9.4 ns
7.4
32
15.6
0.740
1.0
V
0.570
30.7 ns
14.3
16.4
20 nC
0.66 nH
0.2
1.5
0.77 W
http://onsemi.com
2





 NTMS4916N
NTMS4916N
TYPICAL PERFORMANCE CURVES
25 10V
7V
20 5 V
4V
15 3.0 V
TJ = 25°C
2.8 V
10 2.6 V
2.2 V
2.5 V
5 2.4 V
2.3 V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
50
VDS 10 V
40
30
20 TJ = 125°C
10 TJ = 25°C
TJ = 55°C
0
1 1.5 2 2.5 3 3.5 4
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4.5
0.030
0.025
0.020
0.015
0.010
0.005
TJ = 25°C
ID = 12 A
0.01
0.009
TJ = 25°C
0.008
0.007
0.006
VGS = 4.5 V
VGS = 10 V
0.000
3 4 5 6 7 8 9 10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. GatetoSource
Voltage
0.005
2 4 6 8 10 12 14 16 18 20 22
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
1.70
1.60 ID = 12 A
1.50 VGS = 10 V
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
50 25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
10000
VGS = 0 V
1000
TJ = 150°C
100
TJ = 100°C
10
150 5
10 15 20 25 30
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
3



Recommended third-party NTMS4916N Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)