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CAL-DIODE. SKCD46C120I4FR Datasheet

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CAL-DIODE. SKCD46C120I4FR Datasheet






SKCD46C120I4FR CAL-DIODE. Datasheet pdf. Equivalent




SKCD46C120I4FR CAL-DIODE. Datasheet pdf. Equivalent





Part

SKCD46C120I4FR

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD46C120I4FR Datasheet


Semikron International SKCD46C120I4FR

SKCD46C120I4FR; SKCD 46 C 120 I4F R Absolute Maximum Rat ings Symbol VRRM IF(AV) IFSM Tjmax Con ditions Tj = 25 °C, IR = 0.12 mA Tc = 80 °C, Tj = 175 °C, Fi=PI/2 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1200 48 430 430 175 Unit V A A A °C CAL-DIODE IF = 75 A VRRM = 1200 V Size : 9,12 mm x 5,10 mm SKCD 46 C 120 I4F R Features • • • • max. junction 175 °C very low forward voltage .


Semikron International SKCD46C120I4FR

drop positive temperature coefficient ex treme soft recovery Electrical Charact eristics Symbol i²t IR VF Conditions Tj = 150 °C, sin 180°, 10 ms Tj = 25 °C, VRRM = 1200 V Tj = 150 °C, VRRM = 1200 V Tj = 25 °C, IF = 75 A Tj = 150 °C, IF = 75 A Tj = 175 °C, IF = 75 A min. typ. max. 925 0.12 Unit A²s mA mA V V V V m V m 7.00 2.17 2. 11 1.96 0.90 16.1 0.82 15.20 1.


Semikron International SKCD46C120I4FR

4.00 2.49 2.42 2.27 1.10 17.70 0.98 17.3 0 V(TO) rT V(TO) rT Tj = 150 °C Tj = 150 °C Tj = 175 °C Tj = 175 °C Dyn amic Characteristics Symbol trr Err Irr m Typical Applications* • freewheeli ng diode for IGBT Conditions Tj = 150 °C, 75 A, 600 V, 1500 A/µs Tj = 150 C, 75 A, 600 V, 1500 A/µs Tj = 150 ° C, 75 A, 600 V, 1500 A/µs min. typ. 0.5 4.2 58 max. Unit µs mJ A.



Part

SKCD46C120I4FR

Description

CAL-DIODE

Manufacture

Semikron International

Datasheet
Download SKCD46C120I4FR Datasheet




 SKCD46C120I4FR
SKCD 46 C 120 I4F R
CAL-DIODE
IF = 75 A
VRRM = 1200 V
Size: 9,12 mm x 5,10 mm
SKCD 46 C 120 I4F R
Features
• max. junction 175 °C
• very low forward voltage drop
• positive temperature coefficient
• extreme soft recovery
Typical Applications*
• freewheeling diode for IGBT
Absolute Maximum Ratings
Symbol Conditions
VRRM
IF(AV)
IFSM
Tjmax
Tj = 25 °C, IR = 0.12 mA
Tc = 80 °C, Tj = 175 °C, Fi=PI/2
10 ms
Tj = 25 °C
sin 180°
Tj = 150 °C
Electrical Characteristics
Symbol Conditions
i²t
IR
VF
V(TO)
rT
V(TO)
rT
Tj = 150 °C, sin 180°, 10 ms
Tj = 25 °C, VRRM = 1200 V
Tj = 150 °C, VRRM = 1200 V
Tj = 25 °C, IF = 75 A
Tj = 150 °C, IF = 75 A
Tj = 175 °C, IF = 75 A
Tj = 150 °C
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
Dynamic Characteristics
Symbol Conditions
trr Tj = 150 °C, 75 A, 600 V, 1500 A/µs
Err Tj = 150 °C, 75 A, 600 V, 1500 A/µs
Irrm Tj = 150 °C, 75 A, 600 V, 1500 A/µs
Thermal Characteristics
Symbol Conditions
Tj
Tstg
Tsolder
Tsolder
Rth(j-c)
10 min.
5 min.
Semitrans Assembly
Mechanical Characteristics
Symbol Conditions
Raster
size
Area total
Anode Metallization
Cathode Metallization
Wire bond
Package
Chips /
Package
Values
1200
48
430
430
175
Unit
V
A
A
A
°C
min.
typ.
7.00
2.17
2.11
1.96
0.90
16.1
0.82
15.20
max. Unit
925
0.12
14.00
2.49
2.42
2.27
1.10
17.70
0.98
17.30
A²s
mA
mA
V
V
V
V
m
V
m
min. typ. max. Unit
0.5 µs
4.2 mJ
58 A
min. typ. max. Unit
-40 175 °C
-40 175 °C
250 °C
320 °C
0.66 K/W
Values
Unit
9,12 x 5,10
46
bondable (Al)
solderable (Ag/Ni)
Al, typ. diameter = 300 µm
wafer frame
308
mm2
mm²
pcs
SKCD
ww©w.DbaytaSShEeMet4IKU.RneOt N
Rev. 0 – 16.03.2011
1





 SKCD46C120I4FR
SKCD 46 C 120 I4F R
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
2
Rev. 0 – 16.03.2011
© by SEMIKRON








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