K10T60 Datasheet: IGBT





K10T60 IGBT Datasheet

Part Number K10T60
Description IGBT
Manufacture Infineon Technologies
Total Page 13 Pages
PDF Download Download K10T60 Datasheet PDF

Features: TrenchStop® Series IKP10N60T p Low Lo ss DuoPack : IGBT in TrenchStop® and F ieldstop technology with soft, fast rec overy anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE(sat) 1.5 V (typ .) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Variable Speed Drive f or washing machines, air conditioners a nd induction cooking - Uninterrupted Po wer Supply ® TrenchStop and Fieldstop technology for 600 V applications offer s : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy par allel switching capability due to posit ive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fas t recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for tar get applications Pb-free lead plating; RoHS compliant Complete product spectru m and PSpice Models : http://www.infine on.com/igbt/ VCE 600V IC 10A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Code K10T60 Package G.

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TrenchStop® Series
IKP10N60T
p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
PG-TO-220-3-1
C
E
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IKP10N60T 600V 10A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Marking Code
K10T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-220-3-1
Value
600
20
10
30
30
20
10
30
±20
5
110
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
www.DPataoSwheeet4rUS.neetmiconductors
1
Rev. 2.2 May 06

                    
                 






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