80NF75L Datasheet: STP80NF75L





80NF75L STP80NF75L Datasheet

Part Number 80NF75L
Description STP80NF75L
Manufacture STMicroelectronics
Total Page 11 Pages
PDF Download Download 80NF75L Datasheet PDF

Features: STP80NF75L STB80NF75L STB80NF75L-1 N-CHA NNEL 75V - 0.008 Ω - 80A TO-220/D2PAK /I2PAK STripFET™ II POWER MOSFET TYPE STP80NF75L STB80NF75L STB80NF75L-1 s s s s VDSS 75 V 75 V 75 V RDS(on) <0.0 1 Ω <0.01 Ω <0.01 Ω ID 80 A 80 A 80 A 3 1 3 12 TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE D 2PAK TO-263 I2PAK TO-262 DESCRIPTION This Power MOSFET is the latest develop ment of STMicroelectronis unique "Singl e Feature Size™" strip-based process. The resulting transistor shows extreme ly high packing density for low onresis tance, rugged avalanche characteristics and less critical alignment steps ther efore a remarkable manufacturing reprod ucibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVER TERS s SOLENOID AND RELAY DRIVERS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDG R VGS ID(•) ID IDM(••) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = .

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STP80NF75L
STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP80NF75L
STB80NF75L
STB80NF75L-1
75 V
75 V
75 V
<0.01
<0.01
<0.01
s TYPICAL RDS(on) = 0.008
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
80 A
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(•)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Current Limited by Package
(••) Pulse width limited by safe operating area.
November 2001
.
Value
75
75
± 16
80
80
320
300
2
12
930
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 80A, di/dt 960A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V
1/11
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