H04N60 Datasheet (data sheet) PDF





H04N60 Datasheet, N-Channel Power Field Effect Transistor

H04N60   H04N60  

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www.DataSheet4U.net HI-SINCERITY MICROE LECTRONICS CORP. Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/5 H04N60 Ser ies N-Channel Power Field Effect Transi stor H04N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high e nergy in the avalanche mode and switch efficiently. This new high energy devic e also offers a drain-to-source diode w ith fast recovery time. Designed for hi gh voltage, high speed switching applic ations such as power suplies, converter s, power motor controls and bridge circ uits. 1 2 3 3-Lead Plastic TO-220AB Pa ckage Code: E Pin 1: Gate

H04N60 Datasheet, N-Channel Power Field Effect Transistor

H04N60   H04N60  
Pin 2 & Tab: Drain Pin 3: Source Featu res • Higher Current Rating • Lower RDS(on) • Lower Capacitances • Low er Total Gate Charge • Tighter VSD Sp ecifications • Avalanche Energy Speci fied 1 2 3 3-Lead Plastic TO-220FP Pac kage Code: F Pin 1: Gate Pin 2: Drain P in 3: Source D G S H04N60 Series Symb ol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Co ntinuous) Drain to Current (Pulsed) Gat e-to-Source Voltage (Continue) Total Po wer Dissipation (TC=25oC) H04N60E (TO-2 20AB) PD H04N60F (TO-220FP) Derate abov e 25°C H04N60E (TO-220AB) H04N60F (TO- 220FP) Tj, Tstg EAS TL Operating and St orage Temperature Range Single Pulse Dr ain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=2 5Ω) Maximum Lead Temperature for Sold ering Purposes, 1/8” from case for 10 seconds 0.56 0.2 -55 to 150 250 260 ° C mJ °C W/°C 70 30 W Value 4 16 ±30 Units A A V H04N60E, H04N60F HSMC Pro duct Specification www.DataSheet4U.net www.DataSheet4U.net HI-SINCERITY MICR OELECTRONICS CORP. Thermal Characterist ics Symbol RθJC RθJA Parameter Therma l Resistance Junction to Case Max. Ther mal Resistance Junction to Ambient Max. TO-220AB TO-220FP 62.5 Value Spec. No . : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 2/5 Units 1.3 5 °C/W °C/W ELectrical








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