Photo-Triac Photocoupler. TLP361J Datasheet

TLP361J Photocoupler. Datasheet pdf. Equivalent

Part TLP361J
Description GaAs Ired & Photo-Triac Photocoupler
Feature TOSHIBA Photocoupler GaAs Ired & Photo-Triac TLP361J Triac Drivers Programmable Controllers AC-Outpu.
Manufacture Toshiba Semiconductor
Datasheet
Download TLP361J Datasheet

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TLP361J
TOSHIBA Photocoupler GaAs Ired & Photo-Triac
TLP361J
Triac Drivers
Programmable Controllers
AC-Output Modules, Solid State Relays
TLP361J
Unit: mm
TOSHIBA TLP361J consists of a zero-voltage-crossing turn-on photo-
triac optically coupled to a gallium arsenide infrared-emitting diode in a
four-lead plastic DIP package.
• Peak off-state voltage: 600 V (min)
• Trigger LED current: 10 mA (max)
• On-state current: 100 mA (max)
• Isolation voltage: 5000 Vrms (min)
• Zero crossing Function
• UL recognized: UL1577, file No. E67349
• Option (D4) type
JEDEC
TÜV approved: DIN EN60747-5-2
TOSHIBA
11-5B2
Certificate No. R50033433
Weight: 0.26 g (typ.)
Maximum operating insulation voltage : 890 Vpk
Maximum permissible overvoltage
: 8000 Vpk
(Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).”
•Construction mechanical rating
7.62 mm pitch
TLPXXX type
Creepage distance
Clearance
Insulation thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
10.16 mm pitch
TLPXXXF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
•Trigger LED current
Classification*
Trigger LED current (mA)
VT=3V, Ta=25°C
Min Max
(IFT7)
7
Standard
10
Marking of
classification
T7
T7blank
Pin Configuration (top view)
14
2 ZC 3
1: Anode
2: Cathode
3: Terminal1
4: Terminal2
*Example: “(IFT7)”; “TLP361J(IFT7)”
(Note) When specifying the application type name for
certification testing, be sure to use the standard
product type name, e.g. TLP361J(IFT7): TLP361J
Start of commercial production
2003/06
1 2014-09-01



TLP361J
TLP361J
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating (Ta 53°C)
Peak forward current (100 μs pulse, 100 pps)
Reverse voltage
Junction temperature
Off-state output terminal voltage
On-state RMS current
On-state current derating (Ta 25°C)
Peak on-state current (100 μs pulse, 120 pps)
Peak non-repetitive surge current (Pw = 10 ms)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Isolation voltage (AC, 1 minute, R.H. 60%)
Ta = 25°C
Ta = 70°C
(Note 1)
IF
IF /°C
IFP
VR
Tj
VDRM
IT(RMS)
IT/°C
ITP
ITSM
Tj
Tstg
Topr
Tsol
BVS
50 mA
0.7 mA /°C
1A
5V
125 °C
600 V
100
mA
50
-1.1 mA /°C
2A
1.2 A
115 °C
55~125 °C
40~100
260
°C
°C
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min Typ. Max
Unit
Supply voltage
Forward current
Peak on-state current
Operating temperature
VAC — — 240 Vac
IF 15 20 25 mA
ITP
——
1
A
Topr
25 —
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2 2014-09-01





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