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GT40QR21

Toshiba
Part Number GT40QR21
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Nov 15, 2011
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT40QR21 GT40QR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switc...
Datasheet PDF File GT40QR21 PDF File

GT40QR21
GT40QR21


Overview
Discrete IGBTs Silicon N-Channel IGBT GT40QR21 GT40QR21 1.
Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) 6.
5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip.
(3) Enhancement mode (4) High-speed switching IGBT : tf = 0.
20 µs (typ.
) (IC = 40 A) FWD : trr = 0.
60 µs (typ.
) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.
9 V (typ.
) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3.
Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-12...



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