J377 Datasheet: 2SJ377





J377 2SJ377 Datasheet

Part Number J377
Description 2SJ377
Manufacture Toshiba Semiconductor
Total Page 6 Pages
PDF Download Download J377 Datasheet PDF

Features: www.DataSheet.co.kr 2SJ377 TOSHIBA Fiel d Effect Transistor Silicon P-Channel M OS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC C onverter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-r esistance z High forward transfer admit tance z Low leakage current z Enhanceme nt mode : RDS (ON) = 0.16 Ω (typ.) 1. 2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (max) (VDS = −60 V ) : Vth = −0.8 to −2.0 V (VDS = − 10 V, ID = −1 mA) 9.5 ± 0.3 : |Yfs | = 4.0 S (typ.) 5.5 ± 0.2 1.1 ± 0. 2 0.6 MAX. 0.8 MAX. 2.3 ± 0.2 Absolu te Maximum Ratings (Ta = 25°C) Charact eristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source vo ltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tc h Tstg Rating −60 −60 ±20 −5 − 20 20 273 −5 2 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 0.6 ± 0.1 5 1 2 1.05 MAX. 3 2.3 ± 0.15 2.3 ± 0.15 0.1 ± 0.1 2 1 Pulse (Note 1) GATE DRAIN (HEAT SINK) 3. SOURSE 1. 2. 3 Drain power dissipation (Tc =.

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2SJ377
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L2−π−MOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
z 4 V gate drive
z Low drain-source ON-resistance
: RDS (ON) = 0.16 (typ.)
z High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.8 MAX.
0.6 ± 0.15
1
1.05 MAX.
23
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
5
20
20
273
5
2
150
55 to 150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
2.3 ± 0.15 2.3 ± 0.15
1. GATE
2. DRAIN
HEAT SINK
3. SOURSE
2
1
3
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Rth (chc)
6.25 °C / W
Thermal resistance, channel to ambient
Rth (cha)
125 °C / W
Note 1:
Note 2:
Note 3:
Ensure that the channel temperature does not exceed 150°C.
VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2010-02-05
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