Type Transistor. 2SC1815 Datasheet

2SC1815 Datasheet PDF, Equivalent


Part Number

2SC1815

Description

Silicon NPN Epitaxial Type Transistor

Manufacture

Toshiba Semiconductor

Total Page 4 Pages
PDF Download
Download 2SC1815 Datasheet PDF


2SC1815 Datasheet
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
2SC1815
Unit: mm
· High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
· Excellent hFE linearity: hFE (2) = 100 (typ.)
at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
· Low noise: NF = 1dB (typ.) at f = 1 kHz
· Complementary to 2SA1015 (O, Y, GR class)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
60
50
5
150
50
400
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Base intrinsic resistance
Noise figure
ICBO
VCB = 60 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1)
VCE = 6 V, IC = 2 mA
(Note)
hFE (2) VCE = 6 V, IC = 150 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE (sat)
fT
Cob
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IE = -1 mA
rbb’
f = 30 MHz
VCE = 6 V, IC = 0.1 mA
NF
f = 1 kHz, RG = 10 kW
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
70 ¾ 700
25 100 ¾
¾ 0.1 0.25 V
¾ ¾ 1.0 V
80 ¾ ¾ MHz
¾ 2.0 3.5 pF
¾ 50 ¾
W
¾ 1.0 10 dB
1 2003-03-27

2SC1815 Datasheet
2SC1815
2 2003-03-27


Features Datasheet pdf TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequ ency General Purpose Amplifier Applicat ions Driver Stage Amplifier Application s 2SC1815 Unit: mm · High voltage an d high current: VCEO = 50 V (min), IC = 150 mA (max) · Excellent hFE linearit y: hFE (2) = 100 (typ.) at VCE = 6 V, I C = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · Low noise: NF = 1dB (typ.) at f = 1 kHz · Complement ary to 2SA1015 (O, Y, GR class) Maximu m Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitt er voltage Emitter-base voltage Collect or current Base current Collector power dissipation Junction temperature Stora ge temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 1 50 50 400 125 -55~125 Unit V V V mA mA mW °C °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ. ) Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Cond ition Collector cut-off current Emitter cut-off current DC current gai.
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