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BFU660F

NXP Semiconductors
Part Number BFU660F
Manufacturer NXP Semiconductors
Description NPN wideband silicon RF transistor
Published Jan 15, 2012
Detailed Description BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile CAUTION 1....
Datasheet PDF File BFU660F PDF File

BFU660F
BFU660F

Overview
BFU660F NPN wideband silicon RF transistor Rev.
1 — 11 January 2011 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits „ Low noise high linearity RF transistor „ High output third-order intercept point 27 dBm at 1.
8 GHz „ 40 GHz fT silicon technology 1.
3 Applications „ Analog/digital cordless appl...


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