N-Channel 100 V (D-S) MOSFET
Si4102DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.158 at VGS = 10 V 100
0.175 at VGS = 6 V
ID (A)d 3.8 3.6
Qg (Typ.) 4.6 nC
FEATURES TrenchFET® Power MOSFET 100 % UIS Tested Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS High Frequency Boost Co...
