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NPN Phototransistor. VEMT2520X01 Datasheet

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NPN Phototransistor. VEMT2520X01 Datasheet






VEMT2520X01 Phototransistor. Datasheet pdf. Equivalent




VEMT2520X01 Phototransistor. Datasheet pdf. Equivalent





Part

VEMT2520X01

Description

Silicon NPN Phototransistor



Feature


www.vishay.com VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Pho totransistor VEMT2520X01 VEMT2500X01 16758-10 DESCRIPTION VEMT2500X01 serie s are silicon NPN epitaxial planar phot otransistors in a miniature dome lens, clear epoxy package for surface mountin g. The device is sensitive to visible a nd near infrared radiation. FEATURES Package type: sur.
Manufacture

Vishay

Datasheet
Download VEMT2520X01 Datasheet


Vishay VEMT2520X01

VEMT2520X01; face mount • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2. 3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for v isible and near infrared radiation • Fast response times • Angle of half s ensitivity:  = ± 15° • Package m atched with IR emitter series VSMB2000X 01 • Floor life: 4 weeks, MSL 2a, acc . J-STD-020 • Lead (Pb)-free reflow sold.


Vishay VEMT2520X01

ering • Compliant to RoHS Directive 20 02/95/EC and in accordance to WEEE 2002 /96/EC Note ** Please see document “V ishay Material Category Policy”: www. vishay.com/doc?99902 APPLICATIONS • D etector in automotive applications • Photo interrupters • Miniature switch es • Counters • Encoders • Positi on sensors PRODUCT SUMMARY COMPONENT VEMT2500X01 VEMT2520X01 Ica (mA) 6 .


Vishay VEMT2520X01

6 Note • Test condition see table “ Basic Characteristics”  (deg) ± 15 ± 15 0.1 (nm) 470 to 1090 470 t o 1090 ORDERING INFORMATION ORDERING C ODE VEMT2500X01 VEMT2520X01 Note • MO Q: minimum order quantity PACKAGING Ta pe and reel Tape and reel REMARKS MOQ: 6000 pcs, 6000 pcs/reel MOQ: 6000 pcs, 6000 pcs/reel PACKAGE FORM Reverse gu llwing Gullwing ABSOLUTE MAXIMU.

Part

VEMT2520X01

Description

Silicon NPN Phototransistor



Feature


www.vishay.com VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Pho totransistor VEMT2520X01 VEMT2500X01 16758-10 DESCRIPTION VEMT2500X01 serie s are silicon NPN epitaxial planar phot otransistors in a miniature dome lens, clear epoxy package for surface mountin g. The device is sensitive to visible a nd near infrared radiation. FEATURES Package type: sur.
Manufacture

Vishay

Datasheet
Download VEMT2520X01 Datasheet




 VEMT2520X01
www.vishay.com
VEMT2500X01, VEMT2520X01
Vishay Semiconductors
Silicon NPN Phototransistor
VEMT2520X01
VEMT2500X01
16758-10
DESCRIPTION
VEMT2500X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 15°
• Package matched with IR emitter series
VSMB2000X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT
VEMT2500X01
VEMT2520X01
Ica (mA)
6
6
Note
• Test condition see table “Basic Characteristics”
(deg)
± 15
± 15
0.1 (nm)
470 to 1090
470 to 1090
ORDERING INFORMATION
ORDERING CODE
VEMT2500X01
VEMT2520X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter voltage
Emitter collector voltage
Collector current
Power power dissipation
Junction temperature
Operating temperature range
Tamb 75 °C
VCEO
VECO
IC
PV
Tj
Tamb
VALUE
20
7
50
100
100
- 40 to + 100
UNIT
V
V
mA
mW
°C
°C
Rev. 1.2, 24-Aug-11
1 Document Number: 81134
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VEMT2520X01
www.vishay.com
VEMT2500X01, VEMT2520X01
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Acc. reflow profile fig. 8
Acc. J-STD-051
Tstg
Tsd
RthJA
VALUE
- 40 to + 100
260
250
UNIT
°C
°C
K/W
120
100
80
60
R = 250 K/W
thJA
40
20
0
0 10 20 30 40 50 60 70 80 90 100
21619
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Collector emitter breakdown voltage
IC = 0.1 mA
VCEO
20
Collector dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
VCE = 5 V, E = 0
VCE = 0 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V
ICEO
CCEO
ICA
3
Wavelength of peak sensitivity
Range of spectral bandwidth
p
0.1
Collector emitter saturation voltage
Temperature coefficient of Ica
IC = 0.05 mA
Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V
VCEsat
TkIca
TYP.
1
25
6
± 15
850
470 to 1090
1.1
MAX.
100
9
0.4
UNIT
V
nA
pF
mA
deg
nm
nm
V
%/K
Rev. 1.2, 24-Aug-11
2 Document Number: 81134
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VEMT2520X01
www.vishay.com
VEMT2500X01, VEMT2520X01
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1000
IF = 0
100
V = 70 V
CE
VCE = 25 V
VCE = 5 V
10
1
0 10 20 30 40 50 60 70 80 90 100
20594
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
100
10
1
VCE = 5 V,
λ = 950 nm
0.1
0.01
0.01
21573
0.1 1
Ee - Irradiance (mW/cm²)
10
Fig. 3 - Collector Light Current vs. Irradiance
1.2
1.0
0.8
0.6
0.4
0.2
0
400 500 600 700 800 900 1000 1100
21555
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
1.0
0.9
0.8
0.7
94 8248
0.6 0.4 0.2
0
40°
50°
60°
70°
80°
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
100
90
80
70 RL = 100 Ω
60
50
40
30
tr
20
tf
10
0
0 250 500 750 1000 1250 1500 1750 2000
20599
IC - Collector Current (µA)
Fig. 4 - Rise/Fall Time vs. Collector Current
2.0
1.8
VCE = 5 V
1.6 Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20 40
60 80
Tamb - Ambient Temperature (°C)
100
Fig. 7 - Relative Collector Current vs. Ambient Temperature
Rev. 1.2, 24-Aug-11
3 Document Number: 81134
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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