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ESD-Protection Diode. VESD08-02V Datasheet

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ESD-Protection Diode. VESD08-02V Datasheet






VESD08-02V Diode. Datasheet pdf. Equivalent




VESD08-02V Diode. Datasheet pdf. Equivalent





Part

VESD08-02V

Description

(VESDxx-02V) Single ESD-Protection Diode



Feature


www.DataSheet.co.kr VESDxx-02V Vishay S emiconductors Single ESD-Protection Di ode in SOD-523 FEATURES • Single-line ESD-protection • Low leakage current 1 2 20278 • ESD-immunity acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge 19344 • e3 - Sn • Compliant to RoHS Directive 2002/95 /EC and in accordance to WEEE 2002/96/E C MARKING (example only) XY .
Manufacture

Vishay

Datasheet
Download VESD08-02V Datasheet


Vishay VESD08-02V

VESD08-02V; Bar = cathode marking X = date code Y = type code (see table below) 20279 ORD ERING INFORMATION DEVICE NAME VESD01-02 V VESD03-02V VESD05-02V VESD08-02V VESD 12-02V ORDERING CODE VESD01-02V-G-08 VE SD03-02V-G-08 VESD05-02V-G-08 VESD08-02 V-G-08 VESD12-02V-G-08 TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) 3000 3000 3 000 3000 3000 MINIMUM ORDER QUANTITY 30 00 3000 3000 3000 .


Vishay VESD08-02V

3000 PACKAGE DATA DEVICE NAME VESD01-02 V VESD03-02V VESD05-02V VESD08-02V VESD 12-02V PACKAGE NAME SOD-523 SOD-523 SOD -523 SOD-523 SOD-523 TYPE CODE WEIGHT 1 .4 mg 1.4 mg 1.4 mg 1.4 mg 1.4 mg MOLDI NG COMPOUND FLAMMABILITY RATING UL 94 V -0 UL 94 V-0 UL 94 V-0 UL 94 V-0 UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL leve l 1 (according J-STD-020) MSL level 1 ( according J-STD-02.


Vishay VESD08-02V

0) MSL level 1 (according J-STD-020) MSL level 1 (according J-STD-020) MSL leve l 1 (according J-STD-020) SOLDERING CON DITIONS 260 °C/10 s at terminals 260 C/10 s at terminals 260 °C/10 s at te rminals 260 °C/10 s at terminals 260 C/10 s at terminals . . . . . ** Ple ase see document “Vishay Material Cat egory Policy”: www.vishay.com/doc?999 02 Document Number: 83367 R.

Part

VESD08-02V

Description

(VESDxx-02V) Single ESD-Protection Diode



Feature


www.DataSheet.co.kr VESDxx-02V Vishay S emiconductors Single ESD-Protection Di ode in SOD-523 FEATURES • Single-line ESD-protection • Low leakage current 1 2 20278 • ESD-immunity acc. IEC 61000-4-2 ± 8 kV contact discharge ± 15 kV air discharge 19344 • e3 - Sn • Compliant to RoHS Directive 2002/95 /EC and in accordance to WEEE 2002/96/E C MARKING (example only) XY .
Manufacture

Vishay

Datasheet
Download VESD08-02V Datasheet




 VESD08-02V
www.DataSheet.co.kr
VESDxx-02V
Vishay Semiconductors
Single ESD-Protection Diode in SOD-523
12
20278
19344
MARKING (example only)
XY
Bar = cathode marking
X = date code
Y = type code (see table below)
20279
FEATURES
• Single-line ESD-protection
• Low leakage current
• ESD-immunity acc. IEC 61000-4-2
± 8 kV contact discharge
± 15 kV air discharge
• e3 - Sn
• Compliant to RoHS Directive 2002/95/EC and
in accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VESD01-02V
VESD03-02V
VESD05-02V
VESD08-02V
VESD12-02V
VESD01-02V-G-08
VESD03-02V-G-08
VESD05-02V-G-08
VESD08-02V-G-08
VESD12-02V-G-08
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
3000
3000
3000
3000
3000
MINIMUM ORDER QUANTITY
3000
3000
3000
3000
3000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
VESD01-02V
SOD-523
VESD03-02V
SOD-523
VESD05-02V
SOD-523
VESD08-02V
SOD-523
VESD12-02V
SOD-523
TYPE
CODE
.
.
.
.
.
WEIGHT
1.4 mg
1.4 mg
1.4 mg
1.4 mg
1.4 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
260 °C/10 s at terminals
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 83367
Rev. 1.0, 08-Nov-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VESD08-02V
www.DataSheet.co.kr
VESDxx-02V
Vishay Semiconductors
Single ESD-Protection Diode in
SOD-523
ABSOLUTE MAXIMUM RATINGS VESD01-02V
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
7
63
±8
± 15
- 40 to + 125
- 55 to + 150
ABSOLUTE MAXIMUM RATINGS VESD03-02V
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
9
108
±8
± 15
- 40 to + 125
- 55 to + 150
ABSOLUTE MAXIMUM RATINGS VESD05-02V
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
6
120
±8
± 15
- 40 to + 125
- 55 to + 150
ABSOLUTE MAXIMUM RATINGS VESD08-02V
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
4
120
±8
± 15
- 40 to + 125
- 55 to + 150
ABSOLUTE MAXIMUM RATINGS VESD12-02V
PARAMETER
TEST CONDITIONS
Peak pulse current
acc. IEC 61000-4-5, 8/20 µs/single shot
Peak pulse power
acc. IEC 61000-4-5, 8/20 µs/single shot
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Operating temperature
Junction temperature
Storage temperature
SYMBOL
IPPM
PPP
VESD
TJ
Tstg
VALUE
2
25
±8
± 15
- 40 to + 125
- 55 to + 150
UNIT
A
W
kV
kV
°C
°C
UNIT
A
W
kV
kV
°C
°C
UNIT
A
W
kV
kV
°C
°C
UNIT
A
W
kV
kV
°C
°C
UNIT
A
W
kV
kV
°C
°C
Document Number: 83367
Rev. 1.0, 08-Nov-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
2
Datasheet pdf - http://www.DataSheet4U.net/




 VESD08-02V
www.DataSheet.co.kr
Single ESD-Protection Diode in
SOD-523
VESDxx-02V
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS VESD01-02V
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IRmax.
at VRWM
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
IR
VBR
VC
CD
MIN.
-
1
-
1.5
-
-
ELECTRICAL CHARACTERISTICS VESD03-02V
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IRmax.
at VRWM
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
IR
VBR
VC
CD
MIN.
-
3
-
4
-
-
ELECTRICAL CHARACTERISTICS VESD05-02V
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IRmax.
at VRWM
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
IR
VBR
VC
CD
MIN.
-
5
-
6.5
-
-
ELECTRICAL CHARACTERISTICS VESD08-02V
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IRmax.
at VRWM
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
IR
VBR
VC
CD
MIN.
-
8
-
9
-
-
ELECTRICAL CHARACTERISTICS VESD12-02V
PARAMETER
TEST CONDITIONS/REMARKS
Protection paths
Number of lines which can be protected
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
at IRmax.
at VRWM
at IR = 1 mA
at IPP (see fig. 1)
at VR = 0 V; f = 1 MHz
SYMBOL
Nchannel
VRWM
IR
VBR
VC
CD
MIN.
-
12
-
14
-
-
TYP.
-
-
-
-
9
180
TYP.
-
-
-
-
12
110
TYP.
-
-
-
-
20
55
TYP.
-
-
-
-
30
35
TYP.
-
-
-
-
25
30
MAX.
1
-
100
-
-
-
UNIT
lines
V
µA
V
V
pF
MAX.
1
-
20
-
-
-
UNIT
lines
V
µA
V
V
pF
MAX.
1
-
0.1
-
-
-
UNIT
lines
V
µA
V
V
pF
MAX.
1
-
0.1
-
-
-
UNIT
lines
V
µA
V
V
pF
MAX.
1
-
0.1
-
-
-
UNIT
lines
V
µA
V
V
pF
Document Number: 83367
Rev. 1.0, 08-Nov-10
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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