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Schottky Rectifier. VF20150SG Datasheet

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Schottky Rectifier. VF20150SG Datasheet






VF20150SG Rectifier. Datasheet pdf. Equivalent




VF20150SG Rectifier. Datasheet pdf. Equivalent





Part

VF20150SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V20150 SG, VF20150SG, VB20150SG & VI20150SG Vi shay General Semiconductor High-Voltag e Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Tr ench MOS Schottky technology • Low fo rward voltage drop, low power losses High efficiency operation 2 V20150SG PIN 1 3 1 VF20150SG PIN.
Manufacture

Vishay

Datasheet
Download VF20150SG Datasheet


Vishay VF20150SG

VF20150SG; 1 PIN 2 2 3 • Meets MSL level 1, p er J-STD-020, LF maximum peak of 245 ° C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB K K TO -262AA A NC 1 VB20150SG NC A K HEATSIN K PIN 1 2 3 For use in .


Vishay VF20150SG

high frequency inverters, switching powe r supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA V I20150SG PIN 2 K PIN 3 Case: TO-220AB , TO-262AA ITO-220AB, TO-263AB and PRIMARY CHARACTERISTICS IF(AV) VRRM IFS M VF at IF = 20 A TJ max. 20 A 150 V 14 0 A 0.77 V 150 °C Epoxy meets UL 94V- 0 flammability rati.


Vishay VF20150SG

ng Terminals: Matte tin plated leads, so lderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JES D 201 class 1A whisker test Polarity: A s marked Mounting Torque: 10 in-lbs max imum MAXIMUM RATINGS (TA = 25 °C unle ss otherwise noted) PARAMETER Maximum r epetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward su.

Part

VF20150SG

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product V20150 SG, VF20150SG, VB20150SG & VI20150SG Vi shay General Semiconductor High-Voltag e Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Tr ench MOS Schottky technology • Low fo rward voltage drop, low power losses High efficiency operation 2 V20150SG PIN 1 3 1 VF20150SG PIN.
Manufacture

Vishay

Datasheet
Download VF20150SG Datasheet




 VF20150SG
www.DataSheet.co.kr
New Product
V20150SG, VF20150SG, VB20150SG & VI20150SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20150SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20150SG
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20150SG
NC K
A HEATSINK
3
2
1
VI20150SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
20 A
150 V
140 A
0.77 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20150SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range TJ, TSTG
VF20150SG VB20150SG
150
20
VI20150SG
140
1500
- 55 to + 150
UNIT
V
A
A
V
°C
Document Number: 89060 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VF20150SG
www.DataSheet.co.kr
New Product
V20150SG, VF20150SG, VB20150SG & VI20150SG
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 150 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
TA = 125 °C
VF
0.72
0.87
1.24
0.57
0.65
0.77
Reverse current (2)
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
1.5
2
-
4
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.60
-
-
0.84
-
-
200
20
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20150SG VF20150SG VB20150SG
Typical thermal resistance
RθJC
2.0
4.0
2.0
VI20150SG
2.0
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20150SG-E3/4W
1.88
ITO-220AB
VF20150SG-E3/4W
1.75
TO-263AB
VB20150SG-E3/4W
1.38
TO-263AB
VB20150SG-E3/8W
1.38
TO-262AA
VI20150SG-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V(B,I)20150SG
15 VF20150SG
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = tp/T
tp
2 4 6 8 10 12 14 16 18 20 22 24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89060
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08
Datasheet pdf - http://www.DataSheet4U.net/




 VF20150SG
www.DataSheet.co.kr
New Product
V20150SG, VF20150SG, VB20150SG & VI20150SG
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
10 TA = 150 °C
1
TA = 125 °C
0.1 TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
10
Junction to Case
1
0.01
V(B,I)20150SG
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance
10
Junction to Case
1
0.1
0.01
VF20150SG
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance
Document Number: 89060 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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