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Schottky Rectifier. VF30120S Datasheet

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Schottky Rectifier. VF30120S Datasheet






VF30120S Rectifier. Datasheet pdf. Equivalent




VF30120S Rectifier. Datasheet pdf. Equivalent





Part

VF30120S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr V30120S, VF30120S, VB30120S & VI30120S Vishay General Semi conductor High-Voltage Trench MOS Barr ier Schottky Rectifier Ultra Low VF = 0 .43 V at IF = 5 A TMBS ® TO-220AB ITO- 220AB FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2.
Manufacture

Vishay

Datasheet
Download VF30120S Datasheet


Vishay VF30120S

VF30120S; 2 3 • Meets MSL level 1, per J-STD -020, LF maximum peak of 245 °C (for T O-263AB package) • Solder dip 260 °C , 40 s (for TO-220AB, ITO-220AB and TO- 262AA package) • Component in accorda nce to RoHS 2002/95/EC and WEEE 2002/96 /EC TYPICAL APPLICATIONS For use in hig h frequency inverters, switching power supplies, freewheeling diodes, OR-ing d iode, dc-to-dc converters .


Vishay VF30120S

and reverse battery protection. MECHANIC AL DATA Case: TO-220AB, ITO-220AB, TO-2 63AB and TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte ti n plated leads, solderable per J-STD-00 2 and JESD22-B102 E3 suffix for commerc ial grade, meets JESD 201 class 1A whis ker test Polarity: As marked Mounting T orque: 10 in-lbs maximum 1 PIN 3 PIN 3 TO-263AB K K .


Vishay VF30120S

TO-262AA A NC 1 VB30120S NC A K HEATSIN K 2 3 VI30120S PIN 1 PIN 2 K PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IF SM VF at IF = 30 A TJ max. 30 A 120 V 3 00 A 0.74 V 150 °C MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) PARA METER Maximum repetitive peak reverse v oltage Maximum average forward rectifie d current (Fig. 1) Peak forward surge c urrent 8.3 ms single.

Part

VF30120S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr V30120S, VF30120S, VB30120S & VI30120S Vishay General Semi conductor High-Voltage Trench MOS Barr ier Schottky Rectifier Ultra Low VF = 0 .43 V at IF = 5 A TMBS ® TO-220AB ITO- 220AB FEATURES • Trench MOS Schottky technology • Low forward voltage dro p, low power losses • High efficiency operation 2 V30120S PIN 1 PIN 2 CASE 3 1 VF30120S PIN 1 PIN 2.
Manufacture

Vishay

Datasheet
Download VF30120S Datasheet




 VF30120S
www.DataSheet.co.kr
V30120S, VF30120S, VB30120S & VI30120S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30120S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF30120S
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB30120S
NC K
A HEATSINK
VI30120S
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
30 A
120 V
300 A
0.74 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
VRRM
IF(AV)
IFSM
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30120S VB30120S
120
30
300
1500
- 40 to + 150
VI30120S
UNIT
V
A
A
V
°C
Document Number: 88974 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VF30120S
www.DataSheet.co.kr
V30120S, VF30120S, VB30120S & VI30120S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
IR = 1.0 mA TA = 25 °C
VBR 120 (minimum)
Instantaneous forward voltage (1)
IF = 5 A
IF = 15 A
IF = 30 A
IF = 5 A
IF = 15 A
IF = 30 A
TA = 25 °C
TA = 125 °C
VF
0.50
0.70
0.99
0.43
0.60
0.74
Reverse current (2)
VR = 90 V
VR = 120 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR
18
12
-
22
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
-
-
1.10
-
-
0.82
-
-
500
35
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120S
VF30120S
Typical thermal resistance per diode
RθJC
1.6
4
VB30120S
1.6
VI30120S
1.6
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V30120S-E3/4W
1.88
ITO-220AB
VF30120S-E3/4W
1.76
TO-263AB
VB30120S-E3/4W
1.39
TO-263AB
VB30120S-E3/8W
1.39
TO-262AA
VI30120S-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40
Resistive or Inductive Load
35
30
V(B,I)30120S
25 VF30120S
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
30
D = 0.5 D = 0.8
25
D = 0.3
20
D = 0.2
15
D = 0.1
10
D = 1.0
T
5
D = tp/T
tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88974
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 19-May-08
Datasheet pdf - http://www.DataSheet4U.net/




 VF30120S
www.DataSheet.co.kr
V30120S, VF30120S, VB30120S & VI30120S
Vishay General Semiconductor
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
V(B,I)30120S
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
VF30120S
0.1 1 10
t - Pulse Duration (s)
100
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 88974 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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