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Schottky Rectifier. V30150C Datasheet

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Schottky Rectifier. V30150C Datasheet







V30150C Rectifier. Datasheet pdf. Equivalent




V30150C Rectifier. Datasheet pdf. Equivalent





Part

V30150C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download V30150C Datasheet


Vishay V30150C

V30150C; www.vishay.com V30150C, VF30150C, VB301 50C, VI30150C Vishay General Semiconduc tor Dual High Voltage Trench MOS Barri er Schottky Rectifier Ultra Low VF = 0. 56 V at IF = 5 A TO-220AB TMBS ® IT O-220AB V30150C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF30150C PIN 1 PIN 2 PIN 3 TO-262AA K FEATUR ES • Trench MOS Schottky technology Low forward voltage .


Vishay V30150C

drop, low power losses • High efficien cy operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a nd TO-262AA package) • Material categ orization: For definitions of complianc e please see www.vishay.com/doc?99912 T YPICAL APPLICATIONS For use .


Vishay V30150C

in high frequency converters, switching power supplies, freewheeling diodes, OR -ing diode, DC/DC converters and revers e battery protection. 2 1 VB30150C P IN 1 K 3 2 1 VI30150C PIN 1 PIN 2 PIN 2 HEATSINK PIN 3 K PRIMARY CHA RACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 150 V 140 A 0.71 V 150 °C TO-220AB, ITO-220 AB, TO-263AB, TO-26.



Part

V30150C

Description

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download V30150C Datasheet




 V30150C
www.vishay.com
V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.56 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V30150C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF30150C
PIN 1
PIN 2
PIN 3
TO-262AA
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB
and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
2
1
VB30150C
PIN 1
K
3
2
1
VI30150C
PIN 1
PIN 2
PIN 2
HEATSINK
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 15 A
TJ max.
Package
2 x 15 A
150 V
140 A
0.71 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation
Common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30150C
Max. repetitive peak reverse voltage
Max. average forward rectified current (fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per
diode
EAS
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF30150C VB30150C
150
30
15
VI30150C
140
110
0.5
10 000
1500
- 55 to + 150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 16-Aug-13
1 Document Number: 89047
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 V30150C
www.vishay.com
V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 7.5 A
IF = 15 A
IF = 5 A
IF = 7.5 A
IF = 15 A
Reverse current per diode (2)
VR = 100 V
VR = 150 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
150 (min.)
0.72
0.81
1.11
0.56
0.61
0.71
1.5
2
-
4
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30150C
VF30150C
Typical thermal resistance per diode
RJC
2.2
4.5
VI30150C
2.2
MAX.
-
-
-
1.36
-
-
0.79
-
-
200
20
VI30150C
2.2
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V30150C-E3/4W
1.89
ITO-220AB
VF30150C-E3/4W
1.75
TO-263AB
VB30150C-E3/4W
1.39
TO-263AB
VB30150C-E3/8W
1.39
TO-262AA
VI30150C-E3/4W
1.46
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
40
Resistive or Inductive Load
30
V(B,I)30150C
20 VF30150C
10
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
14
D = 0.8
D = 0.5
12 D = 0.3
10 D = 0.2
8
D = 0.1
6
4
D = 1.0
T
2
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 16-Aug-13
2 Document Number: 89047
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





 V30150C
www.vishay.com
V30150C, VF30150C, VB30150C, VI30150C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10 TA = 150 °C
TA = 125 °C
1
0.1 TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
Junction to Case
1
0.01
V(B,I)30150C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
VF30150C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance
Revision: 16-Aug-13
3 Document Number: 89047
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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