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Schottky Rectifier. VFT2080C Datasheet

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Schottky Rectifier. VFT2080C Datasheet






VFT2080C Rectifier. Datasheet pdf. Equivalent




VFT2080C Rectifier. Datasheet pdf. Equivalent





Part

VFT2080C

Description

Dual Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VFT208 0C Vishay General Semiconductor Dual T rench MOS Barrier Schottky Rectifier Ul tra Low VF = 0.52 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Sch ottky technology • Low forward voltag e drop, low power losses • High effic iency operation • Solder bath tempera ture 275 °C max. 10 s, per JESD 22-B10 6 • Compliant to RoHS Direct.
Manufacture

Vishay

Datasheet
Download VFT2080C Datasheet


Vishay VFT2080C

VFT2080C; ive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT2080 C PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPL ICATIONS For use in high frequency DC/D C converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY C HARACTERISTICS IF(AV) VRRM IFSM VF at I F = 10 A TJ max. 2 x.


Vishay VFT2080C

10 A 80 V 100 A 0.60 V 150 °C MECHANI CAL DATA Case: ITO-220AB Molding compou nd meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compli ant, and commercial grade Terminals: Ma tte tin plated leads, solderable J-STD- 002 and JESD 22-B102 M3 suffix meets JE SD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs ma ximum per MAXIMUM .


Vishay VFT2080C

RATINGS (TA = 25 °C unless otherwise no ted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TST G SYMBOL VRRM VFT2080C 80 20 A 10 100 1 0 000 1500 - 55 to + 150 A V/μs V °C UNIT V Peak forward surge current 8.3 ms single half sine-wave superimposed o n rated load Voltage .

Part

VFT2080C

Description

Dual Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VFT208 0C Vishay General Semiconductor Dual T rench MOS Barrier Schottky Rectifier Ul tra Low VF = 0.52 V at IF = 5 A TMBS ® ITO-220AB FEATURES • Trench MOS Sch ottky technology • Low forward voltag e drop, low power losses • High effic iency operation • Solder bath tempera ture 275 °C max. 10 s, per JESD 22-B10 6 • Compliant to RoHS Direct.
Manufacture

Vishay

Datasheet
Download VFT2080C Datasheet




 VFT2080C
www.DataSheet.co.kr
New Product
VFT2080C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TMBS ®
ITO-220AB
123
VFT2080C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
0.60 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT2080C
80
20
10
100
10 000
1500
- 55 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89260 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VFT2080C
www.DataSheet.co.kr
New Product
VFT2080C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode
VR = 80 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.57
0.67
0.52
0.60
20
10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VFT2080C
6.0
5.0
MAX.
-
0.81
-
0.70
600
20
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT2080C-M3/4W
1.73
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.5 D = 0.8
7 D = 0.3
6 D = 0.2
5 D = 0.1
D = 1.0
4
3T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89260
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 18-Nov-10
Datasheet pdf - http://www.DataSheet4U.net/




 VFT2080C
www.DataSheet.co.kr
New Product
VFT2080C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1 TA = 100 °C
10
Junction to Case
1
0.1
0
TA = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.01
TA = 25 °C
100
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
123
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89260 For technical questions within your region, please contact one of the following:
Revision: 18-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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