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Schottky Rectifier. VFT30L60C Datasheet

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Schottky Rectifier. VFT30L60C Datasheet






VFT30L60C Rectifier. Datasheet pdf. Equivalent




VFT30L60C Rectifier. Datasheet pdf. Equivalent





Part

VFT30L60C

Description

Dual Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VFT30L60C Datasheet


Vishay VFT30L60C

VFT30L60C; www.DataSheet.co.kr New Product VFT30L 60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier U ltra Low VF = 0.32 V at IF = 5.0 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward vol tage drop, low power losses • High ef ficiency operation • Solder dip 275 C max. 10 s, per JESD 22-B106 • Comp liant to RoHS Directive 2002/9.


Vishay VFT30L60C

5/EC and in accordance to WEEE 2002/96/E C 1 2 3 VFT30L60C PIN 1 PIN 3 PIN 2 T YPICAL APPLICATIONS For use in high fre quency converters, switching power supp lies, freewheeling diodes, OR-ing diode , DC/DC converters, and reverse battery protection. MECHANICAL DATA PRIMARY C HARACTERISTICS IF(AV) VRRM IFSM VF at I F = 15 A TJ max. 2 x 15 A 60 V 200 A 0. 45 V 150 °C Case:.


Vishay VFT30L60C

ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - R oHS compliant, and commercial grade Ter minals: Matte tin plated leads, soldera ble J-STD-002 and JESD 22-B102 E3 suffi x meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per MAXIMUM RATINGS (T A = 25 °C unless otherwise noted) PARA METER Maximum repet.



Part

VFT30L60C

Description

Dual Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VFT30L60C Datasheet




 VFT30L60C
www.DataSheet.co.kr
New Product
VFT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TMBS ®
ITO-220AB
123
VFT30L60C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
200 A
VF at IF = 15 A
0.45 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT30L60C
60
30
15
200
10 000
1500
- 40 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89378 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VFT30L60C
www.DataSheet.co.kr
New Product
VFT30L60C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.43
0.46
0.51
0.32
0.36
0.45
-
27
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VFT30L60C
5.0
3.5
MAX.
-
-
0.60
-
-
0.57
4.0
110
UNIT
V
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT30L60C-E3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
9 D = 0.5 D = 0.8
D = 0.3
8
7
D = 0.2
6
5
D = 0.1
4
3
D = 1.0
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89378
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 07-Dec-10
Datasheet pdf - http://www.DataSheet4U.net/





 VFT30L60C
www.DataSheet.co.kr
New Product
VFT30L60C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Transient Thermal Impedance Per Diode
1000
100
10
1
TA = 150 °C
TA = 125 °C
TA = 100 °C
10
Junction to Case
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
123
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89378 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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