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Schottky Rectifier. VFT4060C Datasheet

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Schottky Rectifier. VFT4060C Datasheet






VFT4060C Rectifier. Datasheet pdf. Equivalent




VFT4060C Rectifier. Datasheet pdf. Equivalent





Part

VFT4060C

Description

Dual Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VFT406 0C Vishay General Semiconductor Dual T rench MOS Barrier Schottky Rectifier Ul tra Low VF = 0.32 V at IF = 5.0 A TMBS ® ITO-220AB FEATURES • Trench MOS S chottky technology • Low forward volt age drop, low power losses • High eff iciency operation • Solder dip 275 ° C max. 10 s, per JESD 22-B106 • Compl iant to RoHS Directive 2002/95.
Manufacture

Vishay

Datasheet
Download VFT4060C Datasheet


Vishay VFT4060C

VFT4060C; /EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT4060C PIN 1 PIN 3 PIN 2 TYP ICAL APPLICATIONS For use in high frequ ency converters, switching power suppli es, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery p rotection. MECHANICAL DATA PRIMARY CHA RACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 60 V 240 A 0.48 V 150 °C Case: I.


Vishay VFT4060C

TO-220AB Molding compound meets UL 94 V- 0 flammability rating Base P/N-E3 - RoH S compliant, and commercial grade Termi nals: Matte tin plated leads, solderabl e J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Po larity: As marked Mounting Torque: 10 i n-lbs maximum per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAME TER Maximum repetit.


Vishay VFT4060C

ive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VFT4060C 60 40 A 20 240 10 000 1500 - 40 to + 150 A V/μ s V °C UNIT V Peak forward surge curr ent 8.3 ms single half sine-wave superi mposed on rated load Voltage rate of ch ange (rated VR) Isolation voltage from termal to heatsink t.

Part

VFT4060C

Description

Dual Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VFT406 0C Vishay General Semiconductor Dual T rench MOS Barrier Schottky Rectifier Ul tra Low VF = 0.32 V at IF = 5.0 A TMBS ® ITO-220AB FEATURES • Trench MOS S chottky technology • Low forward volt age drop, low power losses • High eff iciency operation • Solder dip 275 ° C max. 10 s, per JESD 22-B106 • Compl iant to RoHS Directive 2002/95.
Manufacture

Vishay

Datasheet
Download VFT4060C Datasheet




 VFT4060C
www.DataSheet.co.kr
New Product
VFT4060C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TMBS ®
ITO-220AB
123
VFT4060C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
60 V
IFSM
240 A
VF at IF = 20 A
0.48 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT4060C
60
40
20
240
10 000
1500
- 40 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89379 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VFT4060C
www.DataSheet.co.kr
New Product
VFT4060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 10 A
IF = 20 A
IF = 5.0 A
IF = 10 A
IF = 20 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.43
0.48
0.53
0.32
0.39
0.48
-
34
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VFT4060C
5.0
3.0
MAX.
-
-
0.62
-
-
0.57
6.0
190
UNIT
V
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT4060C-E3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
14
D = 0.5 D = 0.8
12 D = 0.3
10
D = 0.2
8
6 D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89379
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 07-Dec-10
Datasheet pdf - http://www.DataSheet4U.net/




 VFT4060C
www.DataSheet.co.kr
New Product
VFT4060C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Transient Thermal Impedance Per Diode
1000
100
10
1
TA = 150 °C
TA = 125 °C
TA = 100 °C
10
Junction to Case
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
45° REF.
0.600 (15.24)
0.580 (14.73)
PIN
123
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89379 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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