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Schottky Rectifier. VSB2200S Datasheet

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Schottky Rectifier. VSB2200S Datasheet






VSB2200S Rectifier. Datasheet pdf. Equivalent




VSB2200S Rectifier. Datasheet pdf. Equivalent





Part

VSB2200S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSB220 0S Vishay General Semiconductor High-V oltage Trench MOS Barrier Schottky Rect ifier FEATURES • Trench MOS Schottky technology TMBS® • Low forward volt age drop, low power losses • High eff iciency operation • Solder dip 275 ° C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Compliant to RoHS directi ve 2002/95/EC and in accordanc.
Manufacture

Vishay

Datasheet
Download VSB2200S Datasheet


Vishay VSB2200S

VSB2200S; e to WEEE 2002/96/EC • Halogen-free ac cording to IEC 61249-2-21 definition 2. 0 A 200 V 40 A 0.65 V 150 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 2.0 A TJ max. MECHANICAL DATA Cas e: DO-204AL (DO-41) Molding compound me ets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte t in plated leads, sold.


Vishay VSB2200S

erable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end TYPICAL APPLICATIONS For u se in high frequency rectifier of switc hing mode power supplies, freewheeling diodes, DC/DC converters or polarity pr otection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PA RAMETER Maximum rep.


Vishay VSB2200S

etitive peak reverse voltage Maximum ave rage forward rectified current (fig. 1) Peak forward surge current 8.3 ms sing le half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage tempera ture range Note (1) (1) SYMBOL VRRM IF (AV) IFSM dV/dt TJ, TSTG VSB2200S 200 2.0 40 10 000 - 40 to + 150 UNIT V A A V/µs °C Units mo.

Part

VSB2200S

Description

High-Voltage Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VSB220 0S Vishay General Semiconductor High-V oltage Trench MOS Barrier Schottky Rect ifier FEATURES • Trench MOS Schottky technology TMBS® • Low forward volt age drop, low power losses • High eff iciency operation • Solder dip 275 ° C max. 10 s, per JESD 22-B106 DO-204AL (DO-41) • Compliant to RoHS directi ve 2002/95/EC and in accordanc.
Manufacture

Vishay

Datasheet
Download VSB2200S Datasheet




 VSB2200S
www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 2.0 A
TJ max.
2.0 A
200 V
40 A
0.65 V
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2200S
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1) (1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
200
2.0
40
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
10 000
- 40 to + 150
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
V
A
A
V/µs
°C
Document Number: 89142 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 VSB2200S
www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage (1)
Reverse current per diode (2)
Typical juntion capacitance
IR = 1.0 mA
IF = 2.0 A
VR = 200 V
4.0 V, 1 MHz
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR 200 (minimum)
VF
0.97
0.65
IR
0.8
0.6
CJ 110
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
MAX.
-
1.23
0.73
40
4
-
UNIT
V
µA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2200S
Typical thermal resistance (1)
RθJA
RθJL
88
20
Note
(1) Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB2200S-M3/54
0.34
54
VSB2200S-M3/73
0.34
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
2.4
2.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
1.6
1.2
0.8
0.4
0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1.8
D = 0.8
1.6 D = 0.3 D = 0.5
1.4 D = 0.2
1.2 D = 0.1
D = 1.0
1.0
0.8
0.6 T
0.4
0.2
0
0
D = tp/T
tp
0.4 0.8 1.2 1.6 2.0
Average Forward Current (A)
2.4
Figure 2. Forward Power Loss Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89142
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 29-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/




 VSB2200S
www.DataSheet.co.kr
New Product
VSB2200S
Vishay General Semiconductor
10
TA = 150 °C
1 TA = 125 °C
0.1
TA = 100 °C
0.01
0.1
TA = 25 °C
0.3 0.5 0.7 0.9 1.1 1.3
Instantaneous Forward Voltage (V)
1.5
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1 10
Reverse Voltage (V)
100
Figure 5. Typical Junction Capacitance
10
1
0.1
0.01
TA = 150 °C
TA = 125 °C
TA = 100 °C
100
10
0.001
TA = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1
0.01
Junction to Ambient
0.1 1 10
t - Pulse Duration (s)
100
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
0.107 (2.7)
0.080 (2.0)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
Document Number: 89142 For technical questions within your region, please contact one of the following:
Revision: 29-Sep-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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