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Schottky Rectifier. VIT3080S Datasheet

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Schottky Rectifier. VIT3080S Datasheet







VIT3080S Rectifier. Datasheet pdf. Equivalent




VIT3080S Rectifier. Datasheet pdf. Equivalent





Part

VIT3080S

Description

Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VIT3080S Datasheet


Vishay VIT3080S

VIT3080S; www.DataSheet.co.kr New Product VT3080 S, VIT3080S Vishay General Semiconducto r Trench MOS Barrier Schottky Rectifie r Ultra Low VF = 0.39 V at IF = 5 A TMB S ® TO-220AB K TO-262AA FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solde r bath temperature 275 °C max. 10 s, p er JESD 22-B106 • AEC-Q101 q.


Vishay VIT3080S

ualified 2 VT3080S PIN 1 PIN 2 CASE 3 1 VIT3080S PIN 1 2 3 1 • Complian t to RoHS Directive 2002/95/EC and in a ccordance to WEEE 2002/96/EC • Haloge n-free according to IEC 61249-2-21 defi nition PIN 2 K PIN 3 PIN 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power suppl ies, freewheeling diodes, OR-ing diode, and reverse battery p.


Vishay VIT3080S

rotection. PRIMARY CHARACTERISTICS IF(A V) VRRM IFSM VF at IF = 30 A TJ max. 30 A 80 V 200 A 0.73 V 150 °C MECHANICA L DATA Case: TO-220AB and TO-262AA Mold ing compound meets UL 94 V-0 flammabili ty rating Base P/N-M3 - halogen-free, R oHS compliant, and commercial grade Bas e P/NHM3 - halogen-free, RoHS compliant , and AEC-Q101 qualified Terminals: Mat te tin plated leads.



Part

VIT3080S

Description

Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VIT3080S Datasheet




 VIT3080S
www.DataSheet.co.kr
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
VT3080S
PIN 1
3
2
1
PIN 2
PIN 3
CASE
VIT3080S
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
80 V
IFSM
200 A
VF at IF = 30 A
0.73 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
VT3080S
VIT3080S
80
30
200
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89242 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/





 VIT3080S
www.DataSheet.co.kr
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A
IF = 15 A
IF = 30 A
IF = 5 A
IF = 15 A
IF = 30 A
Reverse current per diode
VR = 80 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.47
0.61
0.82
0.39
0.57
0.73
70
23
MAX.
-
-
0.95
-
-
0.82
1000
45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT3080S
VIT3080S
Typical thermal resistance
RθJC
1.5
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT3080S-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VIT3080S-M3/4W
VT3080SHM3/4W (1)
VIT3080SHM3/4W (1)
1.45
1.88
1.45
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89242
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/





 VIT3080S
www.DataSheet.co.kr
New Product
VT3080S, VIT3080S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
Resistive or Inductive Load
30
25
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
30
D = 0.5 D = 0.8
25 D = 0.3
D = 0.2
20
D = 0.1
D = 1.0
15
T
10
5
D = tp/T
tp
0
0 5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
100
TA = 150 °C
10 TA = 125 °C
1 TA = 100 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0
TA = 25 °C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Document Number: 89242 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



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