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Schottky Rectifier. VIT30L60C Datasheet

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Schottky Rectifier. VIT30L60C Datasheet






VIT30L60C Rectifier. Datasheet pdf. Equivalent




VIT30L60C Rectifier. Datasheet pdf. Equivalent





Part

VIT30L60C

Description

Dual Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VIT30L60C Datasheet


Vishay VIT30L60C

VIT30L60C; www.DataSheet.co.kr New Product VT30L6 0C, VIT30L60C Vishay General Semiconduc tor Dual Trench MOS Barrier Schottky R ectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® TO-220AB K TO-262AA FEAT URES • Trench MOS Schottky technology • Low forward voltage drop, low powe r losses • High efficiency operation • Solder dip 275 °C max. 10 s, per J ESD 22-B106 • Compliant to R.


Vishay VIT30L60C

oHS Directive 2002/95/EC and in accordan ce to WEEE 2002/96/EC 2 VT30L60C PIN 1 PIN 3 PIN 2 CASE 3 1 VIT30L60C PIN 1 PIN 3 2 3 1 TYPICAL APPLICATIONS Fo r use in high frequency converters, swi tching power supplies, freewheeling dio des, OR-ing diode, DC/DC converters, an d reverse battery protection. PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IF SM VF at IF = 15 A.


Vishay VIT30L60C

TJ max. 2 x 15 A 60 V 200 A 0.45 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - R oHS compliant, and commercial grade Ter minals: Matte tin plated leads, soldera ble J-STD-002 and JESD 22-B102 E3 suffi x meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per.



Part

VIT30L60C

Description

Dual Trench MOS Barrier Schottky Rectifier

Manufacture

Vishay

Datasheet
Download VIT30L60C Datasheet




 VIT30L60C
www.DataSheet.co.kr
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TO-220AB
TMBS ®
TO-262AA
K
VT30L60C
3
2
1
PIN 1
PIN 2
PIN 3
CASE
VIT30L60C
3
2
1
PIN 1
PIN 2
PIN 3
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
200 A
VF at IF = 15 A
0.45 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Operating junction and storage temperature range
dV/dt
TJ, TSTG
VT30L60C
VIT30L60C
60
30
15
200
10 000
- 40 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89380 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 VIT30L60C
www.DataSheet.co.kr
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.43
0.46
0.51
0.32
0.36
0.45
-
27
MAX.
-
-
0.60
-
-
0.57
4.0
110
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT30L60C
VIT30L60C
Typical thermal resistance
per diode
per device
RθJC
1.8
0.8
UNIT
V
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT30L60C-E3/4W
1.85
TO-262AA
VIT30L60C-E3/4W
1.46
PACKAGE CODE
4W
4W
BASE QUANTITY
50/tube
50/tube
DELIVERY MODE
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
9 D = 0.5 D = 0.8
D = 0.3
8
7
D = 0.2
6
5
D = 0.1
4
3
D = 1.0
T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89380
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 07-Dec-10
Datasheet pdf - http://www.DataSheet4U.net/





 VIT30L60C
www.DataSheet.co.kr
New Product
VT30L60C, VIT30L60C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
TA = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
0.1
0.01
TA = 25 °C
0.001
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Transient Thermal Impedance Per Diode
10
Junction to Case
1
0.1
0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Junction Capacitance Per Diode
Document Number: 89380 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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