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Schottky Rectifier. VIT760 Datasheet

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Schottky Rectifier. VIT760 Datasheet






VIT760 Rectifier. Datasheet pdf. Equivalent




VIT760 Rectifier. Datasheet pdf. Equivalent





Part

VIT760

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT760, VIT760 Vishay General Semiconductor T rench MOS Barrier Schottky Rectifier Ul tra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AC K TO-262AA FEATURES • Tren ch MOS Schottky technology • Low forw ard voltage drop, low power losses • High efficiency operation • Solder ba th temperature 275 °C max. 10 s, per J ESD 22-B106 • AEC-Q101 quali.
Manufacture

Vishay

Datasheet
Download VIT760 Datasheet


Vishay VIT760

VIT760; fied 2 VT760 PIN 1 PIN 2 CASE A VIT760 NC A 1 K NC K HEATSINK • Complian t to RoHS Directive 2002/95/EC and in a ccordance to WEEE 2002/96/EC • Haloge n-free according to IEC 61249-2-21 defi nition TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switc hing power supplies, freewheeling diode s, OR-ing diode, and reverse battery pr otection. PRIMARY CHA.


Vishay VIT760

RACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TJ max. 7.5 A 60 V 100 A 0.60 V 150 °C MECHANICAL DATA Case: TO-220AC and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and co mmercial grade Base P/NHM3 - halogen-fr ee, RoHS compliant, and AEC-Q101 qualif ied Terminals: Matte tin plated leads, solderable per J-ST.


Vishay VIT760

D-002 and JESD 22-B102 M3 suffix meets J ESD 201 class 1A whisker test, HM3 suff ix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETE R Maximum repetitive peak reverse volta ge Maximum average forward rectified cu rrent (fig. 1) Peak forward surge curre nt 8.3 ms single ha.

Part

VIT760

Description

Trench MOS Barrier Schottky Rectifier



Feature


www.DataSheet.co.kr New Product VT760, VIT760 Vishay General Semiconductor T rench MOS Barrier Schottky Rectifier Ul tra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AC K TO-262AA FEATURES • Tren ch MOS Schottky technology • Low forw ard voltage drop, low power losses • High efficiency operation • Solder ba th temperature 275 °C max. 10 s, per J ESD 22-B106 • AEC-Q101 quali.
Manufacture

Vishay

Datasheet
Download VIT760 Datasheet




 VIT760
www.DataSheet.co.kr
New Product
VT760, VIT760
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AC
TMBS ®
TO-262AA
K
VT760
PIN 1
PIN 2
2
1
CASE
VIT760
NC
A
A
K
NC
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
7.5 A
VRRM
60 V
IFSM
100 A
VF at IF = 7.5 A
0.60 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AC and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
VT760
VIT760
60
7.5
100
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89231 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VIT760
www.DataSheet.co.kr
New Product
VT760, VIT760
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage
IF = 5 A
IF = 7.5 A
IF = 5 A
IF = 7.5 A
Reverse current
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.58
0.67
0.50
0.60
-
6.6
MAX.
-
0.80
-
0.72
700
25
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT760
VIT760
Typical thermal resistance
RθJC
3.5
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
VT760-M3/4W
1.87
TO-262AA
TO-220AC
TO-262AA
VIT760-M3/4W
VT760HM3/4W (1)
VIT760HM3/4W (1)
1.45
1.87
1.45
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
9
8
7
6
5
4
3
2
1 Mounted on Specific Heatsink
0
0 25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
7
D = 0.5 D = 0.8
6
D = 0.3
5 D = 0.2
4
D = 0.1
3
2
D = 1.0
T
1
D = tp/T
tp
0
0123456789
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89231
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




 VIT760
www.DataSheet.co.kr
New Product
VT760, VIT760
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10 TA = 150 °C
TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10
Junction to Case
1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 5 - Typical Transient Thermal Impedance
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1 10
Reverse Voltage (V)
100
Fig. 6 - Typical Junction Capacitance
Document Number: 89231 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/






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